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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4148T/RSW 150MA, CASE TYPE: DO-35 EIC SEMICONDUCTOR INC. |
309,000 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 5 µA @ 75 V | 75 V | 150mA | 175°C | 1 V @ 10 mA | |
|
|
1N4004T/RSTD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4001STD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
95,000 | - |
RFQ |
Технические |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
MR2504STD 25A, CASE TYPE: MR EIC SEMICONDUCTOR INC. |
4,000 | - |
RFQ |
Технические |
Bag | Automotive | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 400 V | 400 V | 25A | -65°C ~ 175°C | 1 V @ 25 A |
|
|
MBRA210LDIODE SCHOTTKY 10V 2A SMA EIC SEMICONDUCTOR INC. |
2,000 | - |
RFQ |
Технические |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 10 V | 10 V | 2A | -65°C ~ 150°C | 350 mV @ 2 A | |
|
|
BY584BULKDIODE GEN PURP 1500V 85MA DO41 EIC SEMICONDUCTOR INC. |
4,000 | - |
RFQ |
Технические |
Bag | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 200 ns | 3 µA @ 1500 V | 1500 V | 85mA | -65°C ~ 120°C | 8.5 V @ 100 mA | |
|
|
SB390-BULKSCHOTTKY BARRIER RECTIFIER DIODE EIC SEMICONDUCTOR INC. |
2,350 | - |
RFQ |
Технические |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 500 µA | 90 V | 3A | -65°C ~ 150°C | 790 mV @ 3 A | |
|
|
SS3D/BSUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A | |
|
|
1N4007WSTANDARD SOD123FL T/R 3000 EIC SEMICONDUCTOR INC. |
2,534 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
1N5822T/RDIODE SCHOTTKY 40V 3A DO201AD EIC SEMICONDUCTOR INC. |
3,295 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 525 mV @ 3 A | |
|
|
FR207BULKDIODE GEN PURP 1000V 2A DO15 EIC SEMICONDUCTOR INC. |
3,298 | - |
RFQ |
Технические |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 10 µA @ 1000 V | 1000 V | 2A | -65°C ~ 150°C | 1.3 V @ 2 A | |
|
|
1N4007BULKSTD 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
2,750 | - |
RFQ |
Технические |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4007DIODE SWITCHING SI 1KV 1A 2-PIN EIC SEMICONDUCTOR INC. |
19,000 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
|
SN13REC 1 A, CASE TYPE SMA EIC SEMICONDUCTOR INC. |
3,290 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2 µs | 2 µA @ 1.3 kV | 1300 V | 1A (DC) | -65°C ~ 175°C | 1 V @ 1 A | |
|
|
10A07HDIODE SI 1KV 10A 2-PIN CASE D-6 EIC SEMICONDUCTOR INC. |
3,200 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 10A | -65°C ~ 150°C | 1 V @ 10 A | ||
|
|
RM3ARM3 SERIES, 2.5 A, CASE TYPE: DO EIC SEMICONDUCTOR INC. |
2,667 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 2.5A | -40°C ~ 150°C | 950 mV @ 2.5 A | |
|
|
SR1JFRC 1 A, CASE TYPE SMA EIC SEMICONDUCTOR INC. |
3,596 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
|
BY133T/RDIODE GEN PURP 1300V 1A DO41 EIC SEMICONDUCTOR INC. |
140,000 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1300 V | 1300 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4933T/RFR 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
70,000 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N5392T/RSTD 1.5A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
60,000 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A |
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