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Диоды - выпрямители - одиночные

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
UJ3D06520KSD 650V 20A SIC SCHOTTKY DIODE G3, UnitedSiC	422	-	RFQ	Технические	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	654pF @ 1V, 1MHz	0 ns	120 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
UJ3D1220K2 1200V 20A SIC SCHOTTKY DIODE G3, UnitedSiC	536	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	810pF @ 1V, 1MHz	0 ns	190 µA @ 1200 V	1200 V	20A (DC)	-55°C ~ 175°C	1.7 V @ 20 A
UJ3D1220KSD 1200V 20A SIC SCHOTTKY DIODE G3, UnitedSiC	445	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1020pF @ 1V, 1MHz	0 ns	220 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.6 V @ 10 A
UJ3D06530TS 650V 30A SIC SCHOTTKY DIODE G3, UnitedSiC	829	-	RFQ	Технические	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	990pF @ 1V, 1MHz	0 ns	370 µA @ 650 V	650 V	30A (DC)	-55°C ~ 175°C	1.7 V @ 30 A
UJ3D1250K 1200V 50A SIC SCHOTTKY DIODE G3, UnitedSiC	575	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	2340pF @ 1V, 1MHz	0 ns	400 µA @ 1200 V	1200 V	50A (DC)	-55°C ~ 175°C	1.7 V @ 50 A
UJ3D1250K2 1200V 50A SIC SCHOTTKY DIODE G3, UnitedSiC	1,100	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	2.34nF @ 1V, 1MHz	0 ns	400 µA @ 1200 V	1200 V	50A (DC)	-55°C ~ 175°C	1.7 V @ 50 A
UJ3D1202TS 1200V 2A SIC SCHOTTKY DIODE G3, UnitedSiC	8,200	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	109pF @ 1V, 1MHz	0 ns	22 µA @ 1200 V	1200 V	2A (DC)	-55°C ~ 175°C	1.6 V @ 5 A
UJ3D1725K2 1700V 25A SIC SCHOTTKY DIODE G3, UnitedSiC	342	-	RFQ	Технические	Tube	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1500pF @ 1V, 1MHz	-	360 µA @ 1700 V	1700 V	25A	-55°C ~ 175°C	1.7 V @ 25 A
UJ3D06560KSD 650V 60A SIC SCHOTTKY DIODE G3, UnitedSiC	414	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1980pF @ 1V, 1MHz	0 ns	740 µA @ 650 V	650 V	30A (DC)	-55°C ~ 175°C	1.7 V @ 30 A
UJ3D06510TS 650V 10A SIC SCHOTTKY DIODE G3, UnitedSiC	2,627	-	RFQ	Технические	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	327pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
UJ3D06512TS 650V 12A SIC SCHOTTKY DIODE G3, UnitedSiC	2,751	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	392pF @ 1V, 1MHz	0 ns	80 µA @ 650 V	650 V	12A (DC)	-55°C ~ 175°C	1.7 V @ 12 A
UJ3D1210TS 1200V 10A SIC SCHOTTKY DIODE G3, UnitedSiC	3,252	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.6 V @ 10 A
UJ3D1210KSD 1200V 10A SIC SCHOTTKY DIODE G3, UnitedSiC	571	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	500pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 175°C	1.6 V @ 5 A
UJ3D1210KS 1200V 10A SIC SCHOTTKY DIODE G3, UnitedSiC	420	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.6 V @ 10 A
UJ3D1210K2 1200V 10A SIC SCHOTTKY DIODE G3, UnitedSiC	435	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.6 V @ 10 A
UJ3D06516TS 650V 16A SIC SCHOTTKY DIODE G3, UnitedSiC	676	-	RFQ	Технические	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	500pF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	16A (DC)	-55°C ~ 175°C	1.7 V @ 16 A
UJ3D06520TS 650V 20A SIC SCHOTTKY DIODE G3, UnitedSiC	987	-	RFQ	Технические	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	654pF @ 1V, 1MHz	0 ns	120 µA @ 650 V	650 V	20A (DC)	-55°C ~ 175°C	1.7 V @ 20 A
UJ3D06508TS 650V 8A SIC SCHOTTKY DIODE G3, T UnitedSiC	717	-	RFQ	Технические	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	250pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	8A (DC)	-55°C ~ 175°C	1.7 V @ 8 A
UJ3D06506TS 650V 6A SIC SCHOTTKY DIODE G3, T UnitedSiC	983	-	RFQ	Технические	Tube	Gen-III	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	196pF @ 1V, 1MHz	0 ns	40 µA @ 650 V	650 V	6A (DC)	-55°C ~ 175°C	1.7 V @ 6 A
UJ3D1205TS 1200V 5A SIC SCHOTTKY DIODE G3, UnitedSiC	3,622	-	RFQ	Технические	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	250pF @ 1V, 1MHz	0 ns	55 µA @ 1200 V	1200 V	5A (DC)	-55°C ~ 175°C	1.6 V @ 5 A