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Оптические датчики - фотодиоды

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	Wavelength	Color-Enhanced	SpectralRange	DiodeType	Responsivity@nm	ResponseTime	Voltage-DCReverse(Vr)(Max)	Current-Dark(Typ)	ActiveArea	ViewingAngle	OperatingTemperature	MountingType
KPDE030-H8-B INGAAS PHOTODIODE 300UM 900-170 CEL	3,724	-	RFQ	Технические	Bag	-	Active	-	-	400nm ~ 1700nm	-	0.9 A/W @ 1310nm, 1 A/W @ 1550nm	-	20 V	100pA	300µm Dia	-	-40°C ~ 85°C	Through Hole
KPDE086S-H8-B INGAAS PHOTODIODE 860X860UM 900- CEL	3,416	-	RFQ	Технические	Bag	-	Active	-	-	900nm ~ 1700nm	-	0.9 A/W @ 1310nm, 1 A/W @ 1550nm	-	20 V	1nA	0.86mm²	-	-40°C ~ 85°C	Through Hole
KPDA050P-H8-B SI APD AVALANCHE PHOTODIODE 500U CEL	3,624	-	RFQ	Технические	Bag	-	Active	780nm	-	400nm ~ 1000nm	Avalanche	0.45 A/W @ 850nm	-	200 V	20pA	0.5mm Dia	-	-40°C ~ 85°C	Through Hole
KPDE150-H45-B INGAAS PHOTODIODE 1500UM 900-17 CEL	2,786	-	RFQ	Технические	Bag	-	Active	-	-	900nm ~ 1700nm	-	0.9 A/W @ 1310nm, 1 A/W @ 1550nm	-	2 V	1nA	1.5mm Dia	-	-20°C ~ 70°C	Through Hole
KPDA100P-H8-B SI APD AVALANCHE PHOTODIODE 1000 CEL	3,341	-	RFQ	Технические	Bag	-	Active	780nm	-	400nm ~ 1000nm	Avalanche	0.45 A/W @ 850nm	-	200 V	30pA	1mm Dia	-	-40°C ~ 85°C	Through Hole
KPMC29-B INGAAS PHOTODIODE 2.2X2.2MM SI; CEL	2,587	-	RFQ	Технические	Bag	-	Active	-	-	400nm ~ 1700nm	-	0.6 A/W @ 850nm, 0.8 A/W @ 1310nm	-	10 V	2nA	-	-	-20°C ~ 80°C	Surface Mount
KPDA020P-H8-B SI APD AVALANCHE PHOTODIODE 200U CEL	3,712	-	RFQ	Технические	Bag	-	Active	780nm	-	400nm ~ 1000nm	Avalanche	0.45 A/W @ 850nm	-	200 V	10pA	0.2mm Dia	-	-40°C ~ 85°C	Through Hole
KPDE300-H53-B INGAAS PHOTODIODE 3000UM 900-17 CEL	2,957	-	RFQ		Bag	-	Active	-	-	900nm ~ 1700nm	-	0.9 A/W @ 1310nm, 1 A/W @ 1550nm	-	2 V	2nA	3.00mm Dia	-	-20°C ~ 70°C	Through Hole
KPDEA005-56F-B INGAAS APD 55UM 900-1700NM CEL	3,056	-	RFQ		Bag	-	Active	-	-	900nm ~ 1700nm	Avalanche	0.95 A/W @ 1310nm, 1.05 A/W @ 1550nm	-	55 V	10nA	0.06mm Dia	-	-40°C ~ 85°C	Through Hole
KPDEA005B-56F-B INGAAS APD 50UM 900-1700NM CEL	2,408	-	RFQ	Технические	Bag	-	Active	-	-	900nm ~ 1700nm	Avalanche	0.95 A/W @ 1310nm, 1.05 A/W @ 1550nm	-	55 V	20nA	50µm Dia	-	-40°C ~ 85°C	Through Hole
KPDEA007-56F-B INGAAS APD 75UM 900-1700NM CEL	3,866	-	RFQ		Bag	-	Active	-	-	900nm ~ 1700nm	Avalanche	0.9 A/W @ 1310nm, 1.05 A/W @ 1550nm	-	55 V	15nA	0.08mm Dia	-	-40°C ~ 85°C	Through Hole
KPDE086S-H54P-B INGAAS, INAS PHOTODIODE W/THEMO- CEL	3,350	-	RFQ		Bag	-	Active	-	-	900nm ~ 1700nm	-	0.9 A/W @ 1310nm, 1 A/W @ 1550nm	-	20 V	1nA	0.86mm²	-	-40°C ~ 70°C	Through Hole
KPDE086S-H85P-B INGAAS, INAS PD W/THEMO-ELECTRIC CEL	3,214	-	RFQ		Bag	-	Active	-	-	900nm ~ 1700nm	-	0.9 A/W @ 1310nm, 1 A/W @ 1550nm	-	20 V	1nA	0.86mm²	-	-40°C ~ 70°C	Through Hole
KPDS100-H54PS-B INGAAS, INAS PD W/LONG CUTOFF WA CEL	2,128	-	RFQ		Bag	-	Active	3300nm	-	-	-	1.2 A/W @ 3300nm	-	500 mV	-	1.00mm Dia	-	-40°C ~ 60°C	Through Hole