Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) |
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GSIB2560NL-01M3/PBRIDGE RECT 1P 600V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
3,431 | - |
RFQ |
Tube | - | Obsolete | Single Phase | Standard | 600 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | |||||||
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GSIB2580-5401E3/45BRIDGE RECT 1P 800V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
2,552 | - |
RFQ |
Tube | - | Obsolete | Single Phase | Standard | 800 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | |||||||
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GSIB2580-5402E3/45BRIDGE RECT 1P 800V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
2,469 | - |
RFQ |
Tube | - | Obsolete | Single Phase | Standard | 800 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | |||||||
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GSIB660L-5700E3/45BRIDGE RECT 1P 600V 2.8A GSIB-5S Vishay General Semiconductor - Diodes Division |
2,690 | - |
RFQ |
Tube | - | Obsolete | Single Phase | Standard | 600 V | 2.8 A | 950 mV @ 3 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | |||||||
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GSIB6A60L-802E3/45BRIDGE RECT 1P 600V 2.8A GSIB-5S Vishay General Semiconductor - Diodes Division |
2,042 | - |
RFQ |
Tube | - | Obsolete | Single Phase | Standard | 600 V | 2.8 A | 1 V @ 3 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | |||||||
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GSIB6A60L-803E3/45BRIDGE RECT 1P 600V 2.8A GSIB-5S Vishay General Semiconductor - Diodes Division |
2,141 | - |
RFQ |
Tube | - | Obsolete | Single Phase | Standard | 600 V | 2.8 A | 1 V @ 3 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | |||||||
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MBL108S-01M3/IBRIDGE RECT 1PHASE 800V 1A 4SMD Vishay General Semiconductor - Diodes Division |
2,577 | - |
RFQ |
Tube | - | Obsolete | Single Phase | Standard | 800 V | 1 A | 950 mV @ 400 mA | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | |||||||
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BU10065S-M3/45DIODE BRIDGE 10A 600V Vishay General Semiconductor - Diodes Division |
3,369 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 600 V | 3.2 A | 1.05 V @ 5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU-5S | |||||||
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BU2010L-7001M3/51DIODE BRIDGE 20A 1000V Vishay General Semiconductor - Diodes Division |
3,363 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 1 kV | 3.5 A | 1.05 V @ 10 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | |||||||
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BU2010L-7001E3/51DIODE BRIDGE 20A 1000V Vishay General Semiconductor - Diodes Division |
2,705 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 1 kV | 3.5 A | 1.05 V @ 10 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | |||||||
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LVE2560-M3R/PDIODE BRIDGE Vishay General Semiconductor - Diodes Division |
3,074 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 600 V | 25 A | 920 mV @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
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G2SB20-M3/45DIODE BRIDGE GBL Vishay General Semiconductor - Diodes Division |
2,137 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 200 V | 1.5 A | 1 V @ 750 mA | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
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GBLA02-M3/45DIODE BRIDGE 200V GBL Vishay General Semiconductor - Diodes Division |
3,463 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | Single Phase | Standard | 200 V | 4 A | 1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
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G2SB80-M3/45DIODE BRIDGE Vishay General Semiconductor - Diodes Division |
2,903 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 800 V | 1.5 A | 1 V @ 750 mA | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
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GBLA02-M3/51DIODE BRIDGE 200V GBL Vishay General Semiconductor - Diodes Division |
2,127 | - |
RFQ |
![]() Технические |
Tray | - | Obsolete | Single Phase | Standard | 200 V | 4 A | 1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
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G2SB20-M3/51DIODE BRIDGE GBL Vishay General Semiconductor - Diodes Division |
3,926 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 200 V | 1.5 A | 1 V @ 750 mA | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
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G2SB60-E3D/PDIODE BRIDGE Vishay General Semiconductor - Diodes Division |
3,247 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | Single Phase | Standard | 600 V | 1.5 A | 1 V @ 750 mA | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL |