Диоды - мостовые выпрямители

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
2KBP01M-E4/45

2KBP01M-E4/45

BRIDGE RECT 1PHASE 100V 2A KBPM

Vishay General Semiconductor - Diodes Division
2,189 -

RFQ

2KBP01M-E4/45

Технические

Tube - Obsolete Single Phase Standard 100 V 2 A 1.1 V @ 3.14 A 5 µA @ 100 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP02M-E4/45

2KBP02M-E4/45

BRIDGE RECT 1PHASE 200V 2A KBPM

Vishay General Semiconductor - Diodes Division
3,663 -

RFQ

2KBP02M-E4/45

Технические

Tube - Obsolete Single Phase Standard 200 V 2 A 1.1 V @ 3.14 A 5 µA @ 200 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP04M-E4/45

2KBP04M-E4/45

BRIDGE RECT 1PHASE 400V 2A KBPM

Vishay General Semiconductor - Diodes Division
3,749 -

RFQ

2KBP04M-E4/45

Технические

Tube - Obsolete Single Phase Standard 400 V 2 A 1.1 V @ 3.14 A 5 µA @ 400 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP06M-E4/45

2KBP06M-E4/45

BRIDGE RECT 1PHASE 600V 2A KBPM

Vishay General Semiconductor - Diodes Division
3,754 -

RFQ

2KBP06M-E4/45

Технические

Tube - Obsolete Single Phase Standard 600 V 2 A 1.1 V @ 3.14 A 5 µA @ 600 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
3KBP02M-E4/51

3KBP02M-E4/51

BRIDGE RECT 1PHASE 200V 3A KBPM

Vishay General Semiconductor - Diodes Division
3,522 -

RFQ

3KBP02M-E4/51

Технические

Tray - Obsolete Single Phase Standard 200 V 3 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBPM
3KBP04M-E4/51

3KBP04M-E4/51

BRIDGE RECT 1PHASE 400V 3A KBPM

Vishay General Semiconductor - Diodes Division
2,348 -

RFQ

3KBP04M-E4/51

Технические

Tray - Obsolete Single Phase Standard 400 V 3 A 1.05 V @ 3 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBPM
3KBP06M-E4/51

3KBP06M-E4/51

BRIDGE RECT 1PHASE 600V 3A KBPM

Vishay General Semiconductor - Diodes Division
3,177 -

RFQ

3KBP06M-E4/51

Технические

Tray - Obsolete Single Phase Standard 600 V 3 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBPM
3KBP08M-E4/51

3KBP08M-E4/51

BRIDGE RECT 1PHASE 800V 3A KBPM

Vishay General Semiconductor - Diodes Division
2,838 -

RFQ

3KBP08M-E4/51

Технические

Tray - Obsolete Single Phase Standard 800 V 3 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBPM
G2SB20-E3/51

G2SB20-E3/51

BRIDGE RECT 1PHASE 200V 1.5A GBL

Vishay General Semiconductor - Diodes Division
2,660 -

RFQ

G2SB20-E3/51

Технические

Bulk - Obsolete Single Phase Standard 200 V 1.5 A 1 V @ 750 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SB60-E3/51

G2SB60-E3/51

BRIDGE RECT 1PHASE 600V 1.5A GBL

Vishay General Semiconductor - Diodes Division
2,785 -

RFQ

G2SB60-E3/51

Технические

Bulk - Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 750 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SB80-E3/51

G2SB80-E3/51

BRIDGE RECT 1PHASE 800V 1.5A GBL

Vishay General Semiconductor - Diodes Division
3,945 -

RFQ

G2SB80-E3/51

Технические

Bulk - Obsolete Single Phase Standard 800 V 1.5 A 1 V @ 750 mA 50 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SBA20-E3/51

G2SBA20-E3/51

BRIDGE RECT 1PHASE 200V 1.5A GBL

Vishay General Semiconductor - Diodes Division
3,368 -

RFQ

G2SBA20-E3/51

Технические

Bulk - Obsolete Single Phase Standard 200 V 1.5 A 1 V @ 750 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SBA60-E3/51

G2SBA60-E3/51

BRIDGE RECT 1PHASE 600V 1.5A GBL

Vishay General Semiconductor - Diodes Division
3,009 -

RFQ

G2SBA60-E3/51

Технические

Tray - Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 750 mA 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SBA60L-E3/51

G2SBA60L-E3/51

BRIDGE RECT 1PHASE 600V 1.5A GBL

Vishay General Semiconductor - Diodes Division
2,938 -

RFQ

G2SBA60L-E3/51

Технические

Bulk - Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 750 mA 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SBA80-E3/51

G2SBA80-E3/51

BRIDGE RECT 1PHASE 800V 1.5A GBL

Vishay General Semiconductor - Diodes Division
3,664 -

RFQ

G2SBA80-E3/51

Технические

Bulk - Obsolete Single Phase Standard 800 V 1.5 A 1 V @ 750 mA 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G3SBA20L-E3/51

G3SBA20L-E3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
3,507 -

RFQ

G3SBA20L-E3/51

Технические

Bulk - Obsolete Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA60-E3/51

G3SBA60-E3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,542 -

RFQ

G3SBA60-E3/51

Технические

Bulk - Obsolete Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA60L-E3/51

G3SBA60L-E3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,188 -

RFQ

G3SBA60L-E3/51

Технические

Bulk - Obsolete Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA80-E3/51

G3SBA80-E3/51

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division
3,315 -

RFQ

G3SBA80-E3/51

Технические

Bulk - Obsolete Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA20-E3/51

G5SBA20-E3/51

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
2,013 -

RFQ

G5SBA20-E3/51

Технические

Bulk - Obsolete Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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