Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDW30G120C5BFKSA1DIODE GEN PURP 1200V 44A TO247-3 Infineon Technologies |
2,654 | - |
RFQ |
![]() Технические |
Tube | CoolSiC™+ | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 44A (DC) | 1.65 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 124 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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MMBD7000LT1HTSA1DIODE ARRAY GP 100V 200MA SOT23 Infineon Technologies |
2,776 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | 1 Pair Series Connection | Standard | 100 V | 200mA (DC) | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 100 V | 150°C (Max) | Surface Mount |
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BAS4005E6433HTMA1DIODE ARRAY SCHOTTKY 40V SOT23 Infineon Technologies |
2,733 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 Pair Common Cathode | Schottky | 40 V | 120mA (DC) | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | 100 ps | 1 µA @ 30 V | 150°C (Max) | Surface Mount |
|
IDW60C65D1XKSA1DIODE 650V 60A RAPID 1 TO247-3 Infineon Technologies |
3,178 | - |
RFQ |
![]() Технические |
Bulk,Tube | Rapid 1 | Active | 1 Pair Common Cathode | Standard | 650 V | 30A | 1.7 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 66 ns | 40 µA @ 650 V | -40°C ~ 175°C | Through Hole |
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IDW15G120C5BFKSA1DIODE SCHOTKY 1200V 24A TO247-3 Infineon Technologies |
2,898 | - |
RFQ |
![]() Технические |
Tube | CoolSiC™+ | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 24A (DC) | 1.6 V @ 7.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 62 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
IDW40G120C5BFKSA1DIODE GEN PURP 1200V 55A TO247-3 Infineon Technologies |
3,593 | - |
RFQ |
![]() Технические |
Tube | CoolSiC™+ | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 55A (DC) | 1.65 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 166 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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DD100N16SHPSA1DIODE MODULE 1600V 100A Infineon Technologies |
3,828 | - |
RFQ |
![]() Технические |
Tray | - | Active | 1 Pair Series Connection | Standard | 1600 V | 130A | - | - | - | - | - | Chassis Mount |
|
DD180N16SHPSA1DIODE MODULE GP 1600V 192A Infineon Technologies |
2,233 | - |
RFQ |
![]() Технические |
Bulk,Tray | - | Active | 1 Pair Series Connection | Standard | 1600 V | 192A | 1.39 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 1600 V | -40°C ~ 125°C | Chassis Mount |
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DD340N22SHPSA1MOD DIODE PWRBLOCK PB50SB-1 Infineon Technologies |
3,024 | - |
RFQ |
![]() Технические |
Tray | - | Active | 1 Pair Series Connection | Standard | 2200 V | 330A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 2200 V | -40°C ~ 135°C | Chassis Mount |
|
DDB6U85N16LHOSA1DIODE MOD GP 1600V 60A AGISOPACK Infineon Technologies |
2,750 | - |
RFQ |
![]() Технические |
Tray | - | Active | 3 Independent | Standard | 1600 V | 60A | 1.44 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 mA @ 1600 V | 150°C (Max) | Chassis Mount |
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DD104N16KHPSA1DIODE MODULE GP 1600V 104A Infineon Technologies |
3,483 | - |
RFQ |
![]() Технические |
Bulk,Tray | - | Active | 1 Pair Common Cathode | Standard | 1600 V | 104A | 1.4 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | -40°C ~ 150°C | Chassis Mount |
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DD171N16KHPSA1DIODE MODULE GP 1600V 171A Infineon Technologies |
2,231 | - |
RFQ |
![]() Технические |
Tray | DD171N | Active | 1 Pair Common Cathode | Standard | 1600 V | 171A | 1.26 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | -40°C ~ 150°C | Chassis Mount |
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DDB6U205N16LHOSA1DIODE MODULE GP 1600V Infineon Technologies |
3,946 | - |
RFQ |
![]() Технические |
Tray | - | Active | 3 Independent | Standard | 1600 V | - | 1.47 V @ 200 A | - | - | 10 mA @ 1600 V | -40°C ~ 150°C | Chassis Mount |
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DD175N34KHPSA1DIODE MODULE GP 3400V 223A Infineon Technologies |
3,039 | - |
RFQ |
![]() Технические |
Tray | - | Active | 1 Pair Series Connection | Standard | 3400 V | 223A | 2.05 V @ 600 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 3400 V | -40°C ~ 150°C | Chassis Mount |
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DD700N22KHPSA3DIODE MODULE GP 2200V 700A Infineon Technologies |
3,355 | - |
RFQ |
![]() Технические |
Tray | - | Active | 1 Pair Series Connection | Standard | 2200 V | 700A | 1.36 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2200 V | -40°C ~ 150°C | Chassis Mount |
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IDW30C65D1XKSA1DIODE 650V 30A RAPID1 TO247-3 Infineon Technologies |
2,057 | - |
RFQ |
![]() Технические |
Tube | Rapid 1 | Active | 1 Pair Common Cathode | Standard | 650 V | 15A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 71 ns | 40 µA @ 650 V | -40°C ~ 175°C | Through Hole |
|
IDW80C65D2XKSA1DIODE 650V 80A CC RAPID2 TO247-3 Infineon Technologies |
2,796 | - |
RFQ |
![]() Технические |
Tube | Rapid 2 | Active | 1 Pair Common Cathode | Standard | 650 V | 40A | 2.2 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 36 ns | 40 µA @ 650 V | -40°C ~ 175°C | Through Hole |
|
IDW80C65D1XKSA1DIODE 650V 80A CC RAPID1 TO247-3 Infineon Technologies |
3,368 | - |
RFQ |
![]() Технические |
Bulk,Tube | Rapid 1 | Active | 1 Pair Common Cathode | Standard | 650 V | 40A | 1.7 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 77 ns | 40 µA @ 650 V | -40°C ~ 175°C | Through Hole |
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IDW10G120C5BFKSA1DIODE SCHOTTKY 1.2KV 10A TO247-3 Infineon Technologies |
2,458 | - |
RFQ |
![]() Технические |
Bulk,Tube | CoolSiC™+ | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 17A | 1.65 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
|
IDW20G120C5BFKSA1DIODE 1.2KV 20A RAPID2 TO247-3 Infineon Technologies |
3,217 | - |
RFQ |
![]() Технические |
Tube | CoolSiC™+ | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 31A | 1.65 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 83 µA @ 1200 V | -55°C ~ 175°C | Through Hole |