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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CS1G-E3/IDIODE GPP 400V 1.0A DO-214AC Vishay General Semiconductor - Diodes Division |
28,184 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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AS1PJHM3/85ADIODE AVALANCHE 600V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,066 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
BAV300-TRDIODE GP 50V 250MA MICROMELF Vishay General Semiconductor - Diodes Division |
222 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 50 V | 50 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
CSA2D-E3/IDIODE GPP 2A 200V DO-214AC SMA Vishay General Semiconductor - Diodes Division |
14,265 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 11pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 200 V | 200 V | 1.6A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
BAV303-TRDIODE GP 200V 250MA MICROMELF Vishay General Semiconductor - Diodes Division |
263 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
FESB16FTHE3_A/PDIODE GEN PURP 300V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,506 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
|
|
VB30120S-E3/8WDIODE SCHOTTKY 120V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,333 | - |
RFQ |
Технические |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
|
|
FESB16ATHE3_A/PDIODE GEN PURP 50V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,146 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
VS-6FR60DIODE GEN PURP 600V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,732 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
|
AS1PKHM3/84ADIODE AVALANCHE 800V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,222 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 800 V | 800 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
BAT54-02V-V-G-08DIODE SCHOTTKY 30V 200MA SOD523 Vishay General Semiconductor - Diodes Division |
2,580 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA | 125°C (Max) | 800 mV @ 100 mA | ||
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|
FESB16GTHE3_A/PDIODE GEN PURP 400V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,914 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
|
|
VB30120S-E3/4WDIODE SCHOTTKY 120V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,902 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
|
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FESB16BTHE3_A/PDIODE GEN PURP 100V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,769 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
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AS1PKHM3/85ADIODE AVALANCHE 800V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,398 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 800 V | 800 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
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|
VS-8TQ080STRRHM3DIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,565 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
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FESB16CTHE3_A/PDIODE GEN PURP 150V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,632 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
MUR440-E3/54DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,466 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 400 V | 400 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
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AS1PMHM3/84ADIODE AVALANCHE 1KV 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,765 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
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FESB16DTHE3_A/PDIODE GEN PURP 200V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,351 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
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