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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT53A-TRDIODE AVALANCHE 50V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
3,165 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-8EWH06FNHM3DIODE GEN PURP 600V 8A TO252 Vishay General Semiconductor - Diodes Division |
3,405 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.4 V @ 8 A |
|
V30120S-E3/4WDIODE SCHOTTKY 120V 30A TO220AB Vishay General Semiconductor - Diodes Division |
3,286 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
|
|
BYT54D-TRDIODE AVALANCHE 200V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,446 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 200 V | 200 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
BYV13-TRDIODE AVALANCHE 400V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,673 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
VS-30ETU12THN3DIODE GEN PURP 30A TO220AC Vishay General Semiconductor - Diodes Division |
3,341 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 220 ns | 145 µA @ 1200 V | - | 30A | -55°C ~ 175°C | 2.68 V @ 30 A |
|
V30DL45HM3_A/IDIODE SCHOTTKY 45V 30A TO263AC Vishay General Semiconductor - Diodes Division |
2,490 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3 mA @ 45 V | 45 V | 30A | -40°C ~ 150°C | 650 mV @ 30 A |
|
VS-20ATS12HM3RECTIFIER DIODE 20A 1200V TO-220 Vishay General Semiconductor - Diodes Division |
2,426 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A |
|
|
BYW33-TRDIODE AVALANCHE 300V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,025 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
VS-20ETS12THM3RECTIFIER DIODE 20A 1200V TO-220 Vishay General Semiconductor - Diodes Division |
3,896 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A |
|
|
BYW55-TRDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,291 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
VS-25ETS12S-M3DIODE GEN PURP 1.2KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,232 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
BYX84TRDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,216 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
VS-8ETH03STRRHM3FREDS - D2PAK Vishay General Semiconductor - Diodes Division |
3,680 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -55°C ~ 175°C | 1.25 V @ 8 A |
|
RMPG06GHE3_A/100DIODE GPP 1A 400V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,592 | - |
RFQ |
Технические |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SF1200-TRDIODE GEN PURP 1.2KV 1A SOD57 Vishay General Semiconductor - Diodes Division |
3,050 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 1200 V | 1200 V | 1A | -55°C ~ 175°C | 3.4 V @ 1 A | |
|
|
SE100PWB-M3/IDIODE GEN PURP 100V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,512 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
|
V35DM120HM3/IDIODE SCHOTTKY 120V 6.3A TO263AC Vishay General Semiconductor - Diodes Division |
2,920 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.2 mA @ 120 V | 120 V | 6.3A | -40°C ~ 175°C | 1.05 V @ 35 A |
|
|
VS-12TQ035STRLHM3DIODE SCHOTTKY 35V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,551 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 35 V | 35 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
|
|
SE100PWD-M3/IDIODE GEN PURP 200V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,278 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 200 V | 200 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
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