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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10BQ060HM3/5BTDIODE SCHOTTKY 60V 1A DO214AA Vishay General Semiconductor - Diodes Division |
3,399 | - |
RFQ |
Технические |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 5V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 490 mV @ 1 A |
|
S4PB-M3/86ADIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,872 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
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SS2PH6-M3/85ADIODE SCHOTTKY 60V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,540 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 2 µA @ 60 V | 60 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A | |
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|
VS-2EYH01-M3/IFRED PT RECTIFIER SLIMSMAW Vishay General Semiconductor - Diodes Division |
2,079 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
|
S4PD-M3/86ADIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,631 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
|
SS2PH6-M3/84ADIODE SCHOTTKY 60V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 2 µA @ 60 V | 60 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A | |
|
EGL41A-E3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,299 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
S4PG-M3/86ADIODE GEN PURP 400V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,028 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
UG1A-M3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,244 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
EGL41B-E3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,573 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
SB160-E3/53DIODE SCHOTTKY 1A 60V DO-41 Vishay General Semiconductor - Diodes Division |
3,039 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -65°C ~ 125°C | 650 mV @ 1 A | |
|
|
UG1B-M3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,476 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
EGL41C-E3/97DIODE GEN PURP 150V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,536 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
UG1C-M3/73DIODE GEN PURP 150V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,211 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
ES2F-M3/52TDIODE GEN PURP 300V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,610 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
|
EGL41F-E3/97DIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,511 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
UG1D-M3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,092 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
|
MURS140-M3/5BTDIODE GEN PURP 400V 1A DO214AA Vishay General Semiconductor - Diodes Division |
2,923 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
|
EGL41G-E3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,145 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
SS25-M3/52TDIODE SCHOTTKY 2A 50V DO-214AA Vishay General Semiconductor - Diodes Division |
2,828 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A |
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