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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VFT3080S-E3S/4WDIODE SCHOTTKY 80V Vishay General Semiconductor - Diodes Division |
3,088 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 80 V | 80 V | 30A | -55°C ~ 150°C | 950 mV @ 30 A | ||
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EGP51C-E3/DDIODE GEN PURP 150V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,036 | - |
RFQ |
Технические |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
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|
RGF1G-1HE3_A/HDIODE GENERAL PUROSE Vishay General Semiconductor - Diodes Division |
3,080 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8.5pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
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EGP51D-E3/DDIODE GEN PURP 200V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,241 | - |
RFQ |
Технические |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
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|
S2B-001HE3_A/IDIODE GENERAL PUROSE Vishay General Semiconductor - Diodes Division |
3,093 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
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|
EGP51F-E3/DDIODE GEN PURP 300V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,280 | - |
RFQ |
Технические |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 48pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 5A | -65°C ~ 175°C | 1.25 V @ 5 A |
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RS2G-2HE3_A/HDIODE GENERAL PUROSE Vishay General Semiconductor - Diodes Division |
2,702 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
EGP51G-E3/DDIODE GEN PURP 400V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,600 | - |
RFQ |
Технические |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 48pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 5A | -65°C ~ 175°C | 1.25 V @ 5 A |
|
|
GF1D-2HE3_A/HDIODE GENERAL PUROSE Vishay General Semiconductor - Diodes Division |
3,055 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
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M10H100HE3_A/PDIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,110 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 880 mV @ 20 A |
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|
RGF1G-1HE3/67ADIODE GENERAL PUROSE Vishay General Semiconductor - Diodes Division |
3,401 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8.5pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
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BYG22BHE3_A/HDIODE AVALANCHE 100V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,323 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
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V2PM15L-M3/ISCHOTTKY RECTIFIER 2A 150V SMP Vishay General Semiconductor - Diodes Division |
3,822 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 100 µA @ 150 V | 150 V | 1.7A (DC) | -40°C ~ 175°C | 760 mV @ 1 A |
|
GP10GE-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,243 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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VSSAF515-M3/IDIODE SCHOTTKY 150V 5A DO221AC Vishay General Semiconductor - Diodes Division |
3,221 | - |
RFQ |
Технические |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 5A | -40°C ~ 150°C | 1.1 V @ 5 A |
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GP10JE-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,278 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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GP10KE-E3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,203 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
S2AHE3_A/IDIODE GEN PURP 50V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,241 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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GP10ME-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,943 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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S2BHE3_A/IDIODE GEN PURP 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,233 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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