Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SS2H9HE3_A/IDIODE SCHOTTKY 90V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,878 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 90 V | 90 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A |
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VS-2EJH02-M3/6ADIODE GEN PURP 200V 2A DO221AC Vishay General Semiconductor - Diodes Division |
3,480 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | - | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 930 mV @ 2 A |
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SS5P3HM3_A/IDIODE SCHOTTKY 30V 5A TO277A Vishay General Semiconductor - Diodes Division |
2,764 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 30 V | 30 V | 5A | -55°C ~ 150°C | 520 mV @ 5 A |
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AR1PGHM3/85ADIODE AVALANCHE 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,379 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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SS5P5HM3_A/IDIODE SCHOTTKY 50V 5A TO277A Vishay General Semiconductor - Diodes Division |
2,437 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 690 mV @ 5 A |
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AR1PJHM3/84ADIODE AVALANCHE 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,329 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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RMPG06B-E3/54DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,331 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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AR1PJHM3/85ADIODE AVALANCHE 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,098 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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RMPG06G-E3/54DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,494 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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SS32HE3_B/HDIODE SCHOTTKY 20V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,219 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
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AU1PDHM3/84ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,638 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 11pF @ 4V, 1MHz | 75 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.5 V @ 1 A |
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RMPG06K-E3/54DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,532 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 250 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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SS32HE3_B/IDIODE SCHOTTKY 20V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,840 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
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AU1PDHM3/85ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,846 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 11pF @ 4V, 1MHz | 75 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.5 V @ 1 A |
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MPG06JHE3_A/100DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,713 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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SS1P5LHM3/84ADIODE SCHOTTKY 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,024 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 590 mV @ 1 A |
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SS33HE3_B/HDIODE SCHOTTKY 30V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,216 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
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AU1PGHM3/84ADIODE AVALANCHE 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,586 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 11pF @ 4V, 1MHz | 75 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.5 V @ 1 A |
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RS07B-GS18DIODE GP 100V 500MA DO219AB Vishay General Semiconductor - Diodes Division |
3,282 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.15 V @ 700 mA |
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SS33HE3_B/IDIODE SCHOTTKY 30V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,083 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |