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Диоды - выпрямители - одиночные

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
FR301BULK DIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC.	7,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	10 µA @ 50 V	50 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
FR305BULK DIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC.	7,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	250 ns	10 µA @ 600 V	600 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
FR303BULK DIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	10 µA @ 200 V	200 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
BYD13MBULK DIODE AVALANCHE 1000V 1.4A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	-	1 µA @ 1000 V	1000 V	1.4A	175°C	1.05 V @ 1 A
BYD13GBULK DIODE AVALANCHE 400V 1.4A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	-	1 µA @ 400 V	400 V	1.4A	175°C	1.05 V @ 1 A
FR306BULK DIODE GEN PURP 800V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	500 ns	10 µA @ 800 V	800 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
BYD13DBULK DIODE AVALANCHE 200V 1.4A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	-	1 µA @ 200 V	200 V	1.4A	175°C	1.05 V @ 1 A
BYD33GBULK DIODE AVALANCHE 400V 1.3A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	250 ns	1 µA @ 400 V	400 V	1.3A	-65°C ~ 175°C	1.3 V @ 1 A
HER506T/R DIODE GEN PURP 600V 5A DO201AD EIC SEMICONDUCTOR INC.	15,000	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	5A	-65°C ~ 150°C	1.7 V @ 5 A
HER102BULK DIODE GEN PURP 100V 1A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 150°C	1.1 V @ 1 A
BYD13JBULK DIODE AVALANCHE 600V 1.4A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	-	1 µA @ 600 V	600 V	1.4A	175°C	1.05 V @ 1 A
HER306BULK DIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC.	2,480	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	3A	-65°C ~ 150°C	1.7 V @ 3 A
BYD33MBULK DIODE AVALANCHE 1000V 1.3A DO41 EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	300 ns	1 µA @ 1000 V	1000 V	1.3A	-65°C ~ 175°C	1.3 V @ 1 A
BYG20J SF 1.5A, CASE TYPE: SMA-L EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	-	75 ns	1 µA @ 600 V	600 V	1.5A	-55°C ~ 150°C	1.4 V @ 1.5 A
AR2502 DIODE GEN PURP 200V 25A MICRODE EIC SEMICONDUCTOR INC.	1,500	-	RFQ	Технические	Bag	Automotive	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	5 µA @ 200 V	200 V	25A	-65°C ~ 175°C	1 V @ 25 A
1N5818BULK DIODE SCHOTTKY 30V 1A DO41 EIC SEMICONDUCTOR INC.	4,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	1 mA @ 30 V	30 V	1A	-65°C ~ 125°C	550 mV @ 1 A
1N5819BULK DIODE SCHOTTKY 40V 1A DO41 EIC SEMICONDUCTOR INC.	3,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	1 mA @ 40 V	40 V	1A	-65°C ~ 125°C	600 mV @ 1 A
FR304BULK DIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC.	2,500	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	150 ns	10 µA @ 400 V	400 V	3A	-65°C ~ 150°C	1.3 V @ 3 A
RGP02-20E-BULK FAST RECOVERY HIGH VOLTAGE; CASE EIC SEMICONDUCTOR INC.	10,000	-	RFQ	Технические	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	5pF @ 4V, 1MHz	300 ns	5 µA @ 2000 V	2000 V	500mA	-65°C ~ 150°C	1.8 V @ 100 mA
BYD13KBULK DIODE AVALANCHE 800V 1.4A DO41 EIC SEMICONDUCTOR INC.	2,000	-	RFQ	Технические	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	-	1 µA @ 800 V	800 V	1.4A	175°C	1.05 V @ 1 A