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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UPR20E3/TR13DIODE GEN PURP 200V 2A POWERMITE Microchip Technology |
2,478 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
JAN1N6620U/TRRECTIFIER UFR,FRR Microchip Technology |
3,080 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 500 nA @ 200 V | 200 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
1N58175A SCHOTTKY RECTIFIER Microchip Technology |
3,061 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
JAN1N5614USDIODE GEN PURP 200V 1A D5A Microchip Technology |
3,528 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
UPR30E3/TR13DIODE GEN PURP 300V 2A POWERMITE Microchip Technology |
2,458 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
JANTXV1N5623DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
3,704 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 12V, 1MHz | 500 ns | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
1N6638UDIODE GEN PURPOSE Microchip Technology |
3,148 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2.5pF @ 0V, 1MHz | 4.5 ns | 500 nA @ 150 V | 125 V | 300mA (DC) | -65°C ~ 175°C | 1.1 V @ 200 mA | |
|
|
1N5552/TRSTD RECTIFIER Microchip Technology |
2,629 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |
|
JAN1N5615USDIODE GEN PURP 200V 1A D-5A Microchip Technology |
3,699 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 500 µA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 800 mV @ 3 A |
|
|
UPR40E3/TR13DIODE GEN PURP 400V 2A POWERMITE Microchip Technology |
2,609 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
|
CDLL6857ZENER DIODE Microchip Technology |
3,946 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4.5pF @ 0V, 1MHz | - | 150 nA @ 16 V | 16 V | 150mA | -65°C ~ 150°C | 750 mV @ 35 mA | |
|
|
1N6638USDIODE GEN PURPOSE Microchip Technology |
3,903 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
1N5614US/TRSTD RECTIFIER Microchip Technology |
3,676 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
JAN1N5619USDIODE GEN PURP 600V 1A D5A Microchip Technology |
2,673 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 12V, 1MHz | 250 ns | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
UPR30E3/TR7DIODE GEN PURP 300V 2A POWERMITE Microchip Technology |
2,336 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
JANTXV1N4246/TRRECTIFIER UFR,FRR Microchip Technology |
3,414 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
JANTX1N4248DIODE GEN PURP 800V 1A E3 Microchip Technology |
2,125 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | - | - | 5 µs | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
1N6642DIODE GEN PURPOSE Microchip Technology |
2,913 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JAN1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
3,427 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/586 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 5V, 1MHz | - | 50 µA @ 45 V | 45 V | 1A | -65°C ~ 125°C | 490 mV @ 1 A |
|
JANTX1N6642USDIODE GEN PURP 75V 300MA D5D Microchip Technology |
2,292 | - |
RFQ |
Технические |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA |
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