Диоды - выпрямители - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S6M

S6M

DIODE GEN PURP 1KV 6A DO4

GeneSiC Semiconductor
3,535 -

RFQ

S6M

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1000 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6MR

S6MR

DIODE GEN PURP REV 1KV 6A DO4

GeneSiC Semiconductor
2,926 -

RFQ

S6MR

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 1000 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6Q

S6Q

DIODE GEN PURP 1.2KV 6A DO4

GeneSiC Semiconductor
2,604 -

RFQ

S6Q

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1200 V 6A -65°C ~ 175°C 1.1 V @ 6 A
S6QR

S6QR

DIODE GEN PURP REV 1.2KV 6A DO4

GeneSiC Semiconductor
3,464 -

RFQ

S6QR

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 1200 V 6A -65°C ~ 175°C 1.1 V @ 6 A
1N3673AR

1N3673AR

DIODE GEN PURP REV 1KV 12A DO4

GeneSiC Semiconductor
3,469 -

RFQ

1N3673AR

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1202AR

1N1202AR

DIODE GEN PURP REV 200V 12A DO5

GeneSiC Semiconductor
3,646 -

RFQ

1N1202AR

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 200°C 1.1 V @ 12 A
GC50MPS06-247

GC50MPS06-247

SIC DIODE 650V 50A TO-247-2

GeneSiC Semiconductor
2,246 -

RFQ

GC50MPS06-247

Технические

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 650 V 50A (DC) 175°C (Max) -
GB10MPS17-247

GB10MPS17-247

SIC DIODE 1700V 10A TO-247-2

GeneSiC Semiconductor
3,402 -

RFQ

GB10MPS17-247

Технические

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Through Hole 669pF @ 1V, 1MHz 0 ns 12 µA @ 1700 V 1700 V 50A (DC) -55°C ~ 175°C 1.8 V @ 10 A
GB25MPS17-247

GB25MPS17-247

SIC DIODE 1700V 25A TO-247-2

GeneSiC Semiconductor
3,033 -

RFQ

GB25MPS17-247

Технические

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1596pF @ 1V, 1MHz 0 ns 30 µA @ 1700 V 1700 V 110A (DC) -55°C ~ 175°C 1.8 V @ 25 A
1N3890

1N3890

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor
3,863 -

RFQ

1N3890

Технические

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 12A -65°C ~ 150°C 1.4 V @ 12 A
1N3893

1N3893

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor
2,926 -

RFQ

1N3893

Технические

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 600 V 12A -65°C ~ 150°C 1.4 V @ 12 A
FR12B05

FR12B05

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor
2,295 -

RFQ

FR12B05

Технические

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 100 V 12A -65°C ~ 150°C 800 mV @ 12 A
FR12D05

FR12D05

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor
2,038 -

RFQ

FR12D05

Технические

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 200 V 12A -65°C ~ 150°C 800 mV @ 12 A
FR12G05

FR12G05

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor
3,773 -

RFQ

FR12G05

Технические

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 400 V 12A -65°C ~ 150°C 800 mV @ 12 A
FR12J05

FR12J05

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor
2,611 -

RFQ

FR12J05

Технические

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 600 V 12A -65°C ~ 150°C 800 mV @ 12 A
S70Y

S70Y

DIODE GEN PURP 1.6KV 70A DO5

GeneSiC Semiconductor
3,660 -

RFQ

S70Y

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1600 V 70A -65°C ~ 150°C 1.1 V @ 70 A
S70YR

S70YR

DIODE GEN PURP REV 1.6KV 70A DO5

GeneSiC Semiconductor
3,425 -

RFQ

S70YR

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 1600 V 70A -65°C ~ 150°C 1.1 V @ 70 A
S16B

S16B

DIODE GEN PURP 100V 16A DO203AA

GeneSiC Semiconductor
2,793 -

RFQ

S16B

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16BR

S16BR

DIODE GEN PURP 100V 16A DO220AA

GeneSiC Semiconductor
2,748 -

RFQ

S16BR

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16D

S16D

DIODE GEN PURP 200V 16A DO203AA

GeneSiC Semiconductor
3,943 -

RFQ

S16D

Технические

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 16A -65°C ~ 175°C 1.1 V @ 16 A
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