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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VBT5202-M3/4WDIODE SCHOTTKY 200V 5A TO263AB Vishay General Semiconductor - Diodes Division |
2,725 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 175°C | 880 mV @ 5 A |
|
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VS-MBRB735TRL-M3DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,723 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
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|
SRAS20100 MNGDIODE SCHOTTKY 100V 20A TO263AB Taiwan Semiconductor Corporation |
2,441 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
BYT56J-TRDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,037 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
ES3C-E3/9ATDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,862 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
VS-6TQ045HN3DIODE SCHOTTKY 45V 6A TO220AC Vishay General Semiconductor - Diodes Division |
2,198 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A |
|
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VS-MBRB745TRL-M3DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,404 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
|
SRAS2040 MNGDIODE SCHOTTKY 40V 20A TO263AB Taiwan Semiconductor Corporation |
2,427 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
|
BYT77-TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,923 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
MUR320SBHM4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
2,334 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A |
|
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VS-8ETL06STRL-M3DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,902 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
|
VS-MBRB745TRR-M3DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
2,509 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
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VS-10TQ035S-M3DIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,837 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
SE100PWG-M3/IDIODE GEN PURP 400V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,656 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 400 V | 400 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
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BYW73-TRDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,773 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
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MUR340SBHM4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
3,894 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A |
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VS-8ETL06STRR-M3DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,150 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
NHP620LFST1GRECTIFIER 200V 6A onsemi |
2,071 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 500 nA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 950 mV @ 6 A | |
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VS-15ETH03STRL-M3DIODE GEN PURP 300V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,902 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -65°C ~ 175°C | 1.25 V @ 15 A |
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SE100PWJ-M3/IDIODE GEN PURP 600V 10A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,299 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 600 V | 600 V | 10A | -55°C ~ 175°C | 1.14 V @ 10 A |
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