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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS 52-02V E6433DIODE SCHOTTKY 45V 750MA SC79-2 Infineon Technologies |
3,115 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 10pF @ 10V, 1MHz | - | 10 µA @ 45 V | 45 V | 750mA (DC) | 150°C (Max) | 600 mV @ 200 mA | |
|
|
BAT 54-02V E6327DIODE SCHOTTKY 30V 200MA SC79-2 Infineon Technologies |
2,385 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
BAT 54W E6327DIODE SCHOTTKY 30V 200MA SOT323 Infineon Technologies |
2,126 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
IDB06S60CDIODE SCHOTTKY 600V 6A D2PAK Infineon Technologies |
153,293 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A |
|
|
IDB10S60CDIODE SILICON 600V 10A D2PAK Infineon Technologies |
3,289 | - |
RFQ |
Технические |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 480pF @ 1V, 1MHz | 0 ns | 140 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
IDD04SG60CXTMA1DIODE SCHOTTKY 600V 5.6A TO252-3 Infineon Technologies |
2,226 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 80pF @ 1V, 1MHz | 0 ns | 25 µA @ 600 V | 600 V | 5.6A | -55°C ~ 175°C | 2.3 V @ 4 A |
|
|
IDD05SG60CXTMA1DIODE SCHOTTKY 600V 5A TO252-3 Infineon Technologies |
2,352 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 110pF @ 1V, 1MHz | 0 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 2.3 V @ 5 A |
|
|
IDD06SG60CXTMA1DIODE SCHOTTKY 600V 6A TO252-3 Infineon Technologies |
2,999 | - |
RFQ |
Технические |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 2.3 V @ 6 A |
|
|
IDD08SG60CXTMA1DIODE SCHOTTKY 600V 8A TO252-3 Infineon Technologies |
2,356 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 240pF @ 1V, 1MHz | 0 ns | 70 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 2.1 V @ 8 A |
|
|
IDD09SG60CXTMA1DIODE SCHOTTKY 600V 9A TO252-3 Infineon Technologies |
3,108 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 9A (DC) | -55°C ~ 175°C | 2.1 V @ 9 A |
|
|
IDD10SG60CXTMA1DIODE SCHOTTKY 600V 10A TO252-3 Infineon Technologies |
2,588 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 290pF @ 1V, 1MHz | 0 ns | 90 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 2.1 V @ 10 A |
|
|
IDD12SG60CXTMA1DIODE SCHOTTKY 600V 12A TO252-3 Infineon Technologies |
3,543 | - |
RFQ |
Технические |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 175°C | 2.1 V @ 12 A |
|
IDH02SG120XKSA1DIODE SCHOTTKY 1200V 2A TO220-2 Infineon Technologies |
3,423 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 125pF @ 1V, 1MHz | 0 ns | 48 µA @ 1200 V | 1200 V | 2A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A |
|
IDC04S60CEX1SA1DIODE SIC 600V 4A SAWN WAFER Infineon Technologies |
3,525 | - |
RFQ |
Технические |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
IDC04S60CEX7SA1DIODE GEN PURPOSE SAWN WAFER Infineon Technologies |
3,837 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | Surface Mount | - | - | - | - | - | - | - | |
|
|
IDH05S120AKSA1DIODE SCHOTTKY 1200V 5A TO220-2 Infineon Technologies |
2,657 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 120 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
IDC05S60CEX1SA1DIODE SIC 600V 5A SAWN WAFER Infineon Technologies |
3,178 | - |
RFQ |
Технические |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 240pF @ 1V, 1MHz | 0 ns | 70 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A |
|
|
IDC08S60CEX1SA2DIODE SIC 600V 8A SAWN WAFER Infineon Technologies |
3,853 | - |
RFQ |
Технические |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
|
IDC08S60CEX1SA3DIODE SIC 600V 8A SAWN WAFER Infineon Technologies |
2,594 | - |
RFQ |
Технические |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
|
IDC08S60CEX7SA1DIODE GEN PURPOSE SAWN WAFER Infineon Technologies |
2,607 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | Surface Mount | - | - | - | - | - | - | - |
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