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Диоды - выпрямители - одиночные

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CRS15I30B(TE85L,QM DIODE SCHOTTKY 30V 1.5A S-FLAT Toshiba Semiconductor and Storage	2,907	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	82pF @ 10V, 1MHz	-	100 µA @ 30 V	30 V	1.5A	150°C (Max)	400 mV @ 1.5 A
CRS15I40A(TE85L,QM DIODE SCHOTTKY 40V 1.5A S-FLAT Toshiba Semiconductor and Storage	2,442	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	35pF @ 10V, 1MHz	-	60 µA @ 40 V	40 V	1.5A	150°C (Max)	550 mV @ 1.5 A
CMH04(TE12L,Q,M) DIODE GEN PURP 200V 1A MFLAT Toshiba Semiconductor and Storage	2,619	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	980 mV @ 1 A
CMH01(TE12L,Q,M) DIODE GEN PURP 200V 3A M-FLAT Toshiba Semiconductor and Storage	3,145	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	10 µA @ 200 V	200 V	3A	-40°C ~ 150°C	980 mV @ 3 A
CMG03(TE12L,Q,M) DIODE GEN PURP 600V 2A M-FLAT Toshiba Semiconductor and Storage	2,858	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Last Time Buy	Surface Mount	-	-	10 µA @ 600 V	600 V	2A	-40°C ~ 150°C	1.1 V @ 2 A
CMS08(TE12L,Q,M) DIODE SCHOTTKY 30V 1A M-FLAT Toshiba Semiconductor and Storage	2,051	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	70pF @ 10V, 1MHz	-	1.5 mA @ 30 V	30 V	1A	-40°C ~ 125°C	370 mV @ 3 A
CMS09(TE12L,Q,M) DIODE SCHOTTKY 30V 1A M-FLAT Toshiba Semiconductor and Storage	2,430	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	70pF @ 10V, 1MHz	-	500 µA @ 30 V	30 V	1A	-40°C ~ 150°C	450 mV @ 1 A
CMF01(TE12L,Q,M) DIODE GEN PURP 600V 2A MFLAT Toshiba Semiconductor and Storage	3,925	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Last Time Buy	Surface Mount	-	100 ns	50 µA @ 600 V	600 V	2A	-40°C ~ 150°C	2 V @ 2 A
CRS13(TE85L,Q,M) DIODE SCHOTTKY 60V 1A S-FLAT Toshiba Semiconductor and Storage	2,327	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	40pF @ 10V, 1MHz	-	50 µA @ 60 V	60 V	1A	150°C (Max)	550 mV @ 1 A
CRS30I40A(TE85L,QM DIODE SCHOTTKY 40V 3A S-FLAT Toshiba Semiconductor and Storage	3,223	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	62pF @ 10V, 1MHz	-	100 µA @ 40 V	40 V	3A	150°C (Max)	550 mV @ 3 A
CMS10I40A(TE12L,QM DIODE SCHOTTKY 40V 1A M-FLAT Toshiba Semiconductor and Storage	3,630	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	62pF @ 10V, 1MHz	-	100 µA @ 40 V	40 V	1A	150°C (Max)	450 mV @ 1 A
CMH07(TE12L,Q,M) DIODE GEN PURP 200V 2A M-FLAT Toshiba Semiconductor and Storage	3,754	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	10 µA @ 200 V	200 V	2A	-40°C ~ 150°C	980 mV @ 2 A
CMS20I30A(TE12L,QM DIODE SCHOTTKY 30V 2A M-FLAT Toshiba Semiconductor and Storage	2,698	-	RFQ	Технические	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	82pF @ 10V, 1MHz	-	100 µA @ 30 V	30 V	2A	150°C (Max)	450 mV @ 2 A
1SS404,H3F DIODE SCHOTTKY 20V 300MA USC Toshiba Semiconductor and Storage	66,705	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	46pF @ 0V, 1MHz	-	50 µA @ 20 V	20 V	300mA	125°C (Max)	450 mV @ 300 mA
1SS406,H3F SMALL SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	3,849	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	3.9pF @ 0V, 1MHz	-	500 nA @ 20 V	20 V	50mA	125°C (Max)	550 mV @ 50 mA
TBAS16,LM DIODE GEN PURP 80V 215MA SOT23-3 Toshiba Semiconductor and Storage	17,073	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	-	80 V	215mA	-	-
1SS193,LF DIODE GEN PURP 80V 100MA SMINI Toshiba Semiconductor and Storage	15,447	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	3pF @ 0V, 1MHz	4 ns	500 nA @ 80 V	80 V	100mA	125°C (Max)	1.2 V @ 100 mA
1SS416CT,L3F DIODE SCHOTTKY 30V 100MA CST2 Toshiba Semiconductor and Storage	45,285	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	15pF @ 0V, 1MHz	-	50 µA @ 30 V	30 V	100mA	125°C (Max)	500 mV @ 100 mA
CTS05S30,L3F DIODE SCHOTTKY 30V 500MA CST2 Toshiba Semiconductor and Storage	16,586	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	55pF @ 0V, 1MHz	-	150 µA @ 10 V	30 V	500mA	125°C (Max)	340 mV @ 100 mA
CUHS20F30,H3F SCHOTTKY BARRIER DIODE, 30V/2A, Toshiba Semiconductor and Storage	7,316	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	380pF @ 0V, 1MHz	-	60 µA @ 30 V	30 V	2A	150°C (Max)	470 mV @ 2 A