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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.JPG)
|
SJPM-H4DIODE GEN PURP 400V 2A SJP Sanken |
3,757 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 2A | -40°C ~ 150°C | 1.1 V @ 2 A | |
|
EM 2AV1DIODE GEN PURP 600V 1.2A AXIAL Sanken |
3,901 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |
|
|
SJPX-F2DIODE GEN PURP 200V 1.5A SJP Sanken |
2,365 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A |
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