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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EGF1BDIODE GEN PURP 100V 1A SMA onsemi |
20,088 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
BAV103DIODE GEN PURP 200V 200MA SOD80 onsemi |
79,433 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -65°C ~ 200°C | 1.25 V @ 200 mA | |
|
US1FFADIODE GEN PURP 300V 1A SOD123FA onsemi |
4,402 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
MUR410RLGDIODE GEN PURP 100V 4A DO201AD onsemi |
14,114 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 100 V | 100 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A |
|
SS28DIODE SCHOTTKY 80V 2A DO214AA onsemi |
8,221 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 80 V | 80 V | 2A | -65°C ~ 125°C | 850 mV @ 2 A | |
|
|
1N5821RLGDIODE SCHOTTKY 30V 3A DO201AD onsemi |
5,658 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 30 V | 30 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A | |
|
1N4933GDIODE GEN PURP 50V 1A DO41 onsemi |
6,454 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N4936RLGDIODE GEN PURP 400V 1A DO41 onsemi |
9,515 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
SB01-15C-TB-EDIODE SCHOTTKY 150V 100MA 3CP onsemi |
8,314 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 10V, 1MHz | 10 ns | 50 µA @ 75 V | 150 V | 100mA | -55°C ~ 125°C | 750 mV @ 100 mA | |
|
FFSB1065B-F085650V 10A SIC SBD GEN1.5 onsemi |
1,031 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 421pF @ 1V, 100kHz | 0 ns | 40 µA @ 650 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
FFSH1265BDN-F085650V 12A SIC SBD GEN1.5 onsemi |
397 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 259pF @ 1V, 100kHz | 0 ns | 40 µA @ 650 V | 650 V | 7.2A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A |
|
SMMBD914LT3GDIODE GEN PURP 100V 200MA SOT23 onsemi |
28,840 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA (DC) | -55°C ~ 150°C | 1 V @ 10 mA | |
|
|
1N5404RLGDIODE GEN PURP 400V 3A DO201AD onsemi |
31,051 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 150°C | 1 V @ 3 A | |
|
|
1N4934GDIODE GEN PURP 100V 1A DO41 onsemi |
1,811 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N5400RLGDIODE GEN PURP 50V 3A DO201AD onsemi |
14,519 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 1 V @ 3 A | |
|
NSR0230P2T5GDIODE SCHOTTKY 30V 200MA SOD923 onsemi |
30,918 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 10 µA @ 10 V | 30 V | 200mA (DC) | -55°C ~ 125°C | 500 mV @ 200 mA | |
|
|
1N5407RLGDIODE GEN PURP 800V 3A AXIAL onsemi |
4,921 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 3A | -65°C ~ 150°C | 1 V @ 3 A | |
|
EGP20JDIODE GEN PURP 600V 2A DO15 onsemi |
6,485 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 150°C | 1.7 V @ 2 A | |
|
NSR10F40NXT5GDIODE SCHOTTKY 40V 1A 2DSN onsemi |
6,874 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A (DC) | 150°C (Max) | 490 mV @ 1 A | |
|
|
1N4006GDIODE GEN PURP 800V 1A AXIAL onsemi |
6,013 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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