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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR420S V6GDIODE GEN PURP 200V 4A DO214AB Taiwan Semiconductor Corporation |
2,914 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | - | |
|
|
MUR440S V6GDIODE GEN PURP 400V 4A DO214AB Taiwan Semiconductor Corporation |
2,035 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | - | |
|
|
MUR460S V6GDIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation |
2,444 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | - | |
|
ES1G M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,888 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 1V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
HS1KL RUGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
2,341 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
HER3L05G50NS, 3A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
3,457 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 54pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 3A (DC) | -55°C ~ 150°C | 1.32 V @ 3 A | ||
|
|
HER3L03G50NS, 3A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
2,604 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 54pF @ 4V, 1MHz | 50 ns | 3 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
6A100GHR0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
2,367 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
6A40GHR0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
3,546 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
S2DHM4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,140 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
|
6A60GHR0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
2,065 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
S2GHM4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,901 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
|
6A80GHR0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
3,313 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
S2JHM4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,863 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
|
S2KHM4GDIODE GEN PURP 800V 2A DO214AA Taiwan Semiconductor Corporation |
3,284 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
|
S2MHM4GDIODE GEN PURP 2A DO214AA Taiwan Semiconductor Corporation |
3,296 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
|
ES1J M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
3,259 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SF44G R0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
2,056 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
|
|
SF45G R0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
3,400 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A | |
|
|
SF46G R0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
2,102 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
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