Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HS3BBDIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation |
3,538 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | ||
|
TSSA3U45 M2GDIODE SCHOTTKY 45V 3A DO214AC Taiwan Semiconductor Corporation |
3,456 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 3A | -55°C ~ 150°C | 480 mV @ 3 A | |
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S15MCHDIODE GEN PURP 15A DO214AB Taiwan Semiconductor Corporation |
2,947 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 15A (DC) | -55°C ~ 150°C | 1.1 V @ 15 A | |
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HS3ABDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
2,367 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | ||
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TSSA3U60 M2GDIODE SCHOTTKY 60V 3A DO214AC Taiwan Semiconductor Corporation |
2,319 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 610pF @ 4V, 1MHz | 25 ns | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 540 mV @ 3 A | |
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S3K R7GDIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation |
3,725 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
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HS1ML RVGDIODE GEN PURP 1KV 1A SUB SMA Taiwan Semiconductor Corporation |
3,257 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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SF2004G C0GDIODE GEN PURP 200V 20A TO220AB Taiwan Semiconductor Corporation |
2,484 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 20A | -55°C ~ 150°C | 975 mV @ 10 A | |
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SK56CHR7GDIODE SCHOTTKY 60V 5A DO214AB Taiwan Semiconductor Corporation |
2,909 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | |
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S5M R7GDIODE GEN PURP 1KV 5A DO214AB Taiwan Semiconductor Corporation |
2,357 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
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ES2BDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
3,180 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | ||
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BAS316 RRGDIODE GEN PURP 250MA SOD323 Taiwan Semiconductor Corporation |
50,870 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 30 nA @ 25 V | 100 V | 250mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
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1N4148W-G RHGDIODE GEN PURP 100V 150MA SOD123 Taiwan Semiconductor Corporation |
38,117 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 2.5 µA @ 75 V | 100 V | 150mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
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LL4448 L1GDIODE GP 75V 150MA MINIMELF Taiwan Semiconductor Corporation |
17,222 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 54 ns | 5 µA @ 75 V | 75 V | 150mA | -65°C ~ 175°C | 1 V @ 100 mA | |
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1N4148W RHGDIODE GEN PURP 100V 150MA SOD123 Taiwan Semiconductor Corporation |
6,793 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 150mA (DC) | -65°C ~ 150°C | 1 V @ 100 mA | |
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LS4148 L1GDIODE GEN PURP 100V 450MA SOD80 Taiwan Semiconductor Corporation |
72,615 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | - | 5 µA @ 75 V | 100 V | 450mA | -65°C ~ 175°C | 1 V @ 10 mA | |
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1SS355 RRGDIODE GEN PURP 80V 150MA SOD323F Taiwan Semiconductor Corporation |
4,741 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 500mV, 1MHz | 4 ns | 100 nA @ 80 V | 80 V | 150mA | -65°C ~ 150°C | 1.2 V @ 100 mA | |
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TSSW3U60 RVGDIODE SCHOTTKY 60V 3A SOD123W Taiwan Semiconductor Corporation |
11,238 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 580 mV @ 3 A | |
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SR520 A0GDIODE SCHOTTKY 200V 5A DO201AD Taiwan Semiconductor Corporation |
7,251 | - |
RFQ |
![]() Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.05 V @ 5 A | |
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TSPB5H100SDIODE SCHOTTKY 100V 5A SMPC4.0 Taiwan Semiconductor Corporation |
12,970 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 660 mV @ 5 A |