Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SRT12HR0GDIODE SCHOTTKY 20V 1A TS-1 Taiwan Semiconductor Corporation |
2,282 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
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SRT13 R0GDIODE SCHOTTKY 30V 1A TS-1 Taiwan Semiconductor Corporation |
3,087 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
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SRT13HR0GDIODE SCHOTTKY 30V 1A TS-1 Taiwan Semiconductor Corporation |
2,119 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
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SRT15 R0GDIODE SCHOTTKY 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,470 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
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SRT15HR0GDIODE SCHOTTKY 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,858 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
|
SS14LWHRVGDIODE SCHOTTKY 40V 1A SOD123W Taiwan Semiconductor Corporation |
2,733 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A | |
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S3AB R5GDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
1,220 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
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SRT19 R0GDIODE SCHOTTKY 90V 1A TS-1 Taiwan Semiconductor Corporation |
3,070 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
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SRT19HR0GDIODE SCHOTTKY 90V 1A TS-1 Taiwan Semiconductor Corporation |
3,613 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
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LL5818 L0GDIODE SCHOTTKY 30V 1A MELF Taiwan Semiconductor Corporation |
3,018 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 875 mV @ 3 A | |
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LL5819 L0DIODE SCHOTTKY 40V 1A MELF Taiwan Semiconductor Corporation |
2,820 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 900 mV @ 3 A | |
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LSR105 L0GDIODE SCHOTTKY 50V 1A MELF Taiwan Semiconductor Corporation |
2,429 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 1 mA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 700 mV @ 1 A | |
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LSR106 L0GDIODE SCHOTTKY 60V 1A MELF Taiwan Semiconductor Corporation |
2,767 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 1 mA @ 60 V | 60 V | 1A | -65°C ~ 150°C | 700 mV @ 1 A | |
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BA159G A0GDIODE GEN PURP 1KV 1A DO204AL Taiwan Semiconductor Corporation |
2,705 | - |
RFQ |
![]() Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
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S2DAL M3G2A, 200V, STANDARD RECOVERY RECT Taiwan Semiconductor Corporation |
2,290 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 1 µA @ 200 V | 200 V | 2A (DC) | -55°C ~ 150°C | 1.1 V @ 2 A | ||
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BAS85 L0GDIODE SCHTKY 30V 200MA MINI MELF Taiwan Semiconductor Corporation |
2,708 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA | 125°C (Max) | 800 mV @ 100 mA | |
|
ES1A M2GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,551 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
ES1AHM2GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,097 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
ES1AL M2GDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,890 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
ES1AL MHGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,025 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |