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Диоды - переменной емкости (варикапы, варакторы)
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | Capacitance@VrF | CapacitanceRatio | CapacitanceRatioCondition | Voltage-PeakReverse(Max) | DiodeType | Q@VrF | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BB669VARIABLE CAPACITANCE DIODE Infineon Technologies |
3,619 | - |
RFQ |
Технические |
Bulk | - | Active | 2.9pF @ 28V, 1MHz | 20.9 | C1/C28 | 30 V | Single | - | -55°C ~ 150°C | Surface Mount |
|
BB659H7902VARIABLE CAPACITANCE DIODE Infineon Technologies |
2,400 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - |
|
SVC220A-TB-EFM VARICAP TWIN VR 8V onsemi |
3,144 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | |
|
SVC220-PM-TB-EVARIABLE-CAPACITANCE DIODE (IOCA onsemi |
2,517 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | |
|
BB804SF2E6327VARIABLE CAPACITANCE DIODE Infineon Technologies |
3,154 | - |
RFQ |
Технические |
Bulk | - | Active | 47.5pF @ 2V, 1MHz | 1.71 | C2/C8 | 18 V | 1 Pair Common Cathode | 200 @ 2V, 100MHz | -55°C ~ 125°C | Surface Mount |
|
|
BB669E7904VARIABLE CAPACITANCE DIODE Infineon Technologies |
2,218 | - |
RFQ |
Технические |
Bulk | - | Active | 2.9pF @ 28V, 1MHz | 20.9 | C1/C28 | 30 V | Single | - | -55°C ~ 150°C | Surface Mount |
|
BB 664 H7902VARIABLE CAPACITANCE DIODE Infineon Technologies |
3,630 | - |
RFQ |
Технические |
Bulk | - | Active | 2.75pF @ 28V, 1MHz | 17.8 | C1/C28 | 30 V | Single | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SVC220-TB-EFM VARICAP TWIN VR 8V onsemi |
3,497 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | |
|
BB189315DIODE UHF VAR CAP 32V SOD523 NXP USA Inc. |
2,593 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - |
|
SVC203SPAVARIABLE CAPACITANCE DIODE onsemi |
2,475 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - |
|
RKV501KG-E#P1VARIABLE CAPACITANCE DIODE Renesas Electronics America Inc |
2,597 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | |
|
MV2105RLRAVARIABLE CAPACITANCE DIODE onsemi |
3,557 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - |
|
|
HVD326CKRU-EVARIABLE CAPACITANCE DIODE Renesas Electronics America Inc |
3,996 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | |
|
BB814E6327GR2VARIABLE CAPACITANCE DIODE Infineon Technologies |
3,307 | - |
RFQ |
Технические |
Bulk | - | Active | 22.7pF @ 8V, 1MHz | 2.25 | C2/C8 | 18 V | 1 Pair Common Cathode | 200 @ 2V, 100MHz | -55°C ~ 125°C | Surface Mount |
|
|
BB814E7801GR1HTSA1VARIABLE CAPACITANCE DIODE Infineon Technologies |
2,549 | - |
RFQ |
Технические |
Bulk | - | Active | 22.7pF @ 8V, 1MHz | 2.25 | C2/C8 | 18 V | 1 Pair Common Cathode | 200 @ 2V, 100MHz | -55°C ~ 125°C | Surface Mount |
|
SVC270-TL-E-SYDIFFUSED JUNCTION TYPE SILICON V Sanyo |
2,822 | - |
RFQ |
Технические |
Bulk | - | Active | 28.2pF @ 8V, 1MHz | 1.75 | C2/C8 | 16 V | 1 Pair Common Cathode | 100 @ 3V, 100MHz | 150°C (TJ) | Surface Mount |
|
BBY5802LE6327VARIABLE CAPACITANCE DIODE Infineon Technologies |
2,465 | - |
RFQ |
Технические |
Bulk | - | Active | 5.5pF @ 6V, 1MHz | 1.3 | C4/C6 | 10 V | Single | - | -55°C ~ 150°C | Surface Mount |
|
|
BB178/L315VARIABLE CAPACITANCE DIODE, VERY NXP USA Inc. |
3,860 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - |
|
|
SVC272-TL-EXFM VARICAP TWIN VR 8V onsemi |
3,904 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | |
|
|
RKV653KL#R1VARIABLE CAPACITANCE DIODE Renesas Electronics America Inc |
3,940 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - |
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