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Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT25QL256ABA8E12-0AUT

MT25QL256ABA8E12-0AUT

ICSRLFL 256M 3V 24TPBGA AUTO UT

Micron Technology Inc.
2,653 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NOR 256Mb (32M x 8) SPI 133 MHz 1.8ms 5 ns 2.7V ~ 3.6V -40°C ~ 125°C (TA) Surface Mount
MT25QU256ABA8E12-0AUT

MT25QU256ABA8E12-0AUT

ICSRLFL 256M 1.8V 24TPBGA AUTO U

Micron Technology Inc.
2,309 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NOR 256Mb (32M x 8) SPI - Quad I/O 166 MHz 1.8ms 5 ns 1.7V ~ 2V -40°C ~ 125°C (TA) Surface Mount
MT25QL256ABA8E12-0AUT TR

MT25QL256ABA8E12-0AUT TR

IC FLASH 256MBIT SPI 24TPBGA

Micron Technology Inc.
3,246 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NOR 256Mb (32M x 8) SPI 133 MHz 1.8ms - 2.7V ~ 3.6V -40°C ~ 125°C (TA) Surface Mount
MT25QU256ABA8E12-0AUT TR

MT25QU256ABA8E12-0AUT TR

IC FLASH 256MBIT SPI 24TPBGA

Micron Technology Inc.
2,316 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NOR 256Mb (32M x 8) SPI 166 MHz 1.8ms - 1.7V ~ 2V -40°C ~ 125°C (TA) Surface Mount
MT53E128M32D2DS-046 WT:A TR

MT53E128M32D2DS-046 WT:A TR

IC DRAM 4GBIT 2.133GHZ 200WFBGA

Micron Technology Inc.
3,860 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 4Gb (128M x 32) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53E128M32D2DS-053 WT:A TR

MT53E128M32D2DS-053 WT:A TR

IC DRAM 4GBIT 1.866GHZ 200WFBGA

Micron Technology Inc.
3,687 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 4Gb (128M x 32) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53E128M32D2DS-053 IT:A TR

MT53E128M32D2DS-053 IT:A TR

LPDDR4 4G 128MX32 WFBGA

Micron Technology Inc.
2,856 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 4Gb (128M x 32) - 1.866 GHz - - 1.1V -40°C ~ 95°C (TC) Surface Mount
MT41K512M8DA-107 V:P TR

MT41K512M8DA-107 V:P TR

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,693 -

RFQ

Tape & Reel (TR) - Not For New Designs Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT53E256M16D1DS-046 WT:B TR

MT53E256M16D1DS-046 WT:B TR

IC DRAM LPDDR4 WFBGA

Micron Technology Inc.
3,204 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 4Gb (256M x 16) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) -
MT48H32M16LFB4-6 AT:C

MT48H32M16LFB4-6 AT:C

IC DRAM 512MBIT PARALLEL 54VFBGA

Micron Technology Inc.
2,934 -

RFQ

MT48H32M16LFB4-6 AT:C

Технические

Bulk Automotive, AEC-Q100 Not For New Designs Volatile DRAM SDRAM - Mobile LPSDR 512Mb (32M x 16) Parallel 166 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT48H32M16LFB4-6 AT:C TR

MT48H32M16LFB4-6 AT:C TR

IC DRAM 512MBIT PARALLEL 54VFBGA

Micron Technology Inc.
3,515 -

RFQ

MT48H32M16LFB4-6 AT:C TR

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Not For New Designs Volatile DRAM SDRAM - Mobile LPSDR 512Mb (32M x 16) Parallel 166 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT29F64G08CBCGBL04A3WC1-R

MT29F64G08CBCGBL04A3WC1-R

IC FLASH 64GBIT PARALLEL DIE

Micron Technology Inc.
2,268 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND 64Gb (8G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT46H64M16LFBF-5 AIT:B

MT46H64M16LFBF-5 AIT:B

IC DRAM 1GBIT PARALLEL 60VFBGA

Micron Technology Inc.
3,542 -

RFQ

MT46H64M16LFBF-5 AIT:B

Технические

Bulk Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR 1Gb (64M x 16) Parallel 200 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT41K512M8DA-107 V:P

MT41K512M8DA-107 V:P

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,026 -

RFQ

Tray - Not For New Designs Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K256M16TW-107 IT:P

MT41K256M16TW-107 IT:P

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,816 -

RFQ

MT41K256M16TW-107 IT:P

Технические

Box - Active Volatile DRAM SDRAM - DDR3L 4Gb (256M x 16) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT41K256M16TW-107 IT:P TR

MT41K256M16TW-107 IT:P TR

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,719 -

RFQ

MT41K256M16TW-107 IT:P TR

Технические

Tape & Reel (TR) - Active Volatile DRAM SDRAM - DDR3L 4Gb (256M x 16) Parallel 933 MHz 15ns 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT41K512M8DA-107 IT:P TR

MT41K512M8DA-107 IT:P TR

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,146 -

RFQ

MT41K512M8DA-107 IT:P TR

Технические

Tape & Reel (TR) - Active Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 933 MHz 15ns 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT29F2G08ABBGAH4-AATES:G

MT29F2G08ABBGAH4-AATES:G

IC FLASH 2GBIT PARALLEL 63VFBGA

Micron Technology Inc.
2,867 -

RFQ

Bulk Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND (SLC) 2Gb (256M x 8) Parallel - 30ns - 1.7V ~ 1.95V -40°C ~ 105°C (TA) Surface Mount
MT58L64L32PT-10

MT58L64L32PT-10

CACHE SRAM, 64KX32, 5NS PQFP100

Micron Technology Inc.
3,009 -

RFQ

MT58L64L32PT-10

Технические

Bulk * Active - - - - - - - - - - -
MT41J256M8JE-187E:A

MT41J256M8JE-187E:A

IC DRAM 2GBIT PARALLEL 82FBGA

Micron Technology Inc.
3,968 -

RFQ

MT41J256M8JE-187E:A

Технические

Tray - Obsolete Volatile DRAM SDRAM - DDR3 2Gb (256M x 8) Parallel 533 MHz - 13.125 ns 1.425V ~ 1.575V 0°C ~ 95°C (TC) Surface Mount
В целом 7314 Запись«Предыдущий1... 2829303132333435...366Следующий»
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