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Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	MemoryType	MemoryFormat	Technology	MemorySize	MemoryInterface	ClockFrequency	WriteCycleTime-WordPage	AccessTime	Voltage-Supply	OperatingTemperature	MountingType
HM3-6508-5 1024 X 1 CMOS RAM Harris Corporation	2,342	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	1Kb (1K x 1)	Parallel	-	350ns	250 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
MWS5101AEL3 256X4-BIT STANDARD SRAM Harris Corporation	3,766	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	1Kb (256 x 4)	Parallel	-	400ns	350 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole
CDP68HC68R2E STANDARD SRAM, 256X8, CMOS, PDIP Harris Corporation	2,261	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Synchronous	2Kb (256 x 8)	SPI	2.1 MHz	-	-	3V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
HM4-6516B 2K X 8 CMOS RAM Harris Corporation	678	-	RFQ		Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
HM3-6508-9 1024 X 1 CMOS RAM Harris Corporation	3,004	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	1Kb (1K x 1)	Parallel	-	350ns	250 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
IM6654-1IJG 512 X 8 UVPROM Harris Corporation	3,631	-	RFQ	Технические	Bulk	-	Active	Non-Volatile	EPROM	EPROM - UV	4Kb (512 x 8)	Parallel	-	-	450 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
HM1-6514S-9 1024 X 4 CMOS SRAM Harris Corporation	3,957	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Synchronous	4Kb (1K x 4)	Parallel	-	170ns	120 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
HM1-6518-9 1024 X 1 CMOS RAM Harris Corporation	3,261	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	1Kb (1K x 1)	Parallel	-	350ns	250 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
HM1-65262-9 16K X 1 ASYNCHRONOUS CMOS SRAM Harris Corporation	142	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Synchronous	16Kb (16K x 1)	Parallel	-	85ns	85 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
HM1-6504B/883S2064 4096 X 1 CMOS STATIC RAM Harris Corporation	322	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	4Kb (4K x 1)	Parallel	-	290ns	220 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole
IM6654IJG 4096-BIT CMOS UV EPROM Harris Corporation	2,200	-	RFQ	Технические	Bulk	-	Active	Non-Volatile	EPROM	EPROM - UV	4kb (512 x 8)	Parallel	-	-	450 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
CDP1824D 32-WORD X 8-BIT SRAM Harris Corporation	3,653	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	256b (32 x 8)	Parallel	-	-	320 ns	4V ~ 10.5V	-40°C ~ 85°C (TA)	Through Hole
HM1-65262B-9 16K X 1 ASYNCHRONOUS CMOS SRAM Harris Corporation	3,727	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Synchronous	16Kb (16K x 1)	Parallel	-	70ns	70 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole
HM1-65262/883 16K X 1 ASYNCHRONOUS CMOS SRAM Harris Corporation	592	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	16Kb (16K x 1)	Parallel	-	85ns	85 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole
HM1-6516C-9 2K X 8 CMOS RAM Harris Corporation	2,727	-	RFQ		Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
HM6-6617B-9 2K X 8 OTPROM Harris Corporation	160	-	RFQ	Технические	Bulk	-	Active	Non-Volatile	PROM	-	16Kb (2K x 8)	Parallel	-	-	105 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole
HM4-6516-9 2K X 8 CMOS RAM Harris Corporation	334	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	280ns	200 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount
CDP1821CD3R1783 HIGH-RELIABILITY CMOS 1024-WORD Harris Corporation	3,110	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	1Kb (1K x 1)	Parallel	-	420ns	255 ns	4V ~ 6.5V	-55°C ~ 125°C (TA)	Through Hole
HM9-6516BD6129 2K X 8 CMOS RAM Harris Corporation	169	-	RFQ		Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
8102403VA 4096 X 1 CMOS RAM Harris Corporation	203	-	RFQ	Технические	Bulk	-	Active	Volatile	SRAM	SRAM - Asynchronous	4Kb (4K x 1)	Parallel	-	290ns	220 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole