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PMIC - драйверы затворов

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
IR2133J IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	3,616	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	90ns, 40ns	125°C (TJ)	Surface Mount
IR2136 IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies	3,105	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	200mA, 350mA	Inverting	600 V	125ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2153 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,678	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Synchronous	2	N-Channel MOSFET	10V ~ 15.6V	-	-	RC Input Circuit	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2233J IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	2,075	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2V	250mA, 500mA	Inverting	1200 V	90ns, 40ns	125°C (TJ)	Surface Mount
IR2101S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,700	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2102 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,100	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21064 IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies	2,399	-	RFQ	Технические	Tube	-	Obsolete	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21064S IC GATE DRVR HI/LOW SIDE 14SOIC Infineon Technologies	3,697	-	RFQ	Технические	Tube	-	Obsolete	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2106S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,288	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR21074 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	3,348	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	200mA, 350mA	Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21074S IC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies	2,875	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	200mA, 350mA	Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2107S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,332	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	200mA, 350mA	Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
98-0255 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	3,033	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
98-0317 IC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies	2,172	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2108S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,760	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2109 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,282	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21094 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	2,132	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21094S IC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies	3,815	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2109S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,677	-	RFQ	Технические	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2109STR IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,941	-	RFQ	Технические	Tape & Reel (TR)	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount