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PMIC - драйверы затворов
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR2114SSIC GATE DRVR HALF-BRIDGE 24SSOP Infineon Technologies |
2,068 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT | 11.5V ~ 20V | 0.8V, 2V | 2A, 3A | Non-Inverting | 600 V | 24ns, 7ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21368PBFIC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
2,383 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR21368SPBFIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
3,563 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR21363SPBFIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
2,666 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR21365SPBFIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
2,642 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21365JPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,212 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
98-0334PBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
2,135 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21064PBFIC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies |
3,916 | - |
RFQ |
Технические |
Bulk,Tube | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2112-1PBFIC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies |
3,037 | - |
RFQ |
Технические |
Tube | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR21814PBFIC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
2,783 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
|
98-0119PBFIC GATE DRVR HALF-BRIDGE 16DIP Infineon Technologies |
2,801 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2110-2PBFIC GATE DRVR HALF-BRIDGE 16DIP Infineon Technologies |
3,659 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2155PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,889 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | - | 250mA, 500mA | RC Input Circuit | 600 V | 80ns, 45ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2112-2PBFIC GATE DRVR HI/LOW SIDE 16DIP Infineon Technologies |
2,470 | - |
RFQ |
Технические |
Tube | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2113-1PBFIC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
2,682 | - |
RFQ |
Технические |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR4428STRPBFIC DRIVER DUAL LOW SIDE 8SOIC Infineon Technologies |
3,543 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | Low-Side | - | 2 | - | 6V ~ 20V | - | - | Inverting, Non-Inverting | - | - | - | Surface Mount |
|
|
IR21362STRPBFIC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies |
3,046 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR21362JTRPBFIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
2,601 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 11.5V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting, Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2103SPBFIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,511 | - |
RFQ |
Технические |
Bulk,Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Inverting, Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21064SPBFIC GATE DRVR HI/LOW SIDE 14SOIC Infineon Technologies |
3,508 | - |
RFQ |
Технические |
Tube | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
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