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Транзисторы - биполярные (BJT) - массивы, предварительно смещенные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | Resistor-Base(R1) | Resistor-EmitterBase(R2) | DCCurrentGain(hFE)(Min)@IcVce | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | Frequency-Transition | Power-Max | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RN2505TE85LFTRANS 2PNP PREBIAS 0.3W SMV Toshiba Semiconductor and Storage |
319 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 2.2kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
RN1605TE85LFTRANS 2NPN PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
112 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 2.2kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 300mW | Surface Mount |
|
|
RN1606(TE85L,F)TRANS 2NPN PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
390 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 300mW | Surface Mount |
|
|
RN2601(TE85L,F)TRANS 2PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
253 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
|
RN1510(TE85L,F)TRANS 2NPN PREBIAS 0.3W SMV Toshiba Semiconductor and Storage |
142 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 4.7kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 300mW | Surface Mount |
|
RN1704JE(TE85L,F)TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage |
626 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 47kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount |
|
|
RN4601(TE85L,F)TRANS NPN/PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
708 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 300mW | Surface Mount |
|
|
RN4602TE85LFTRANS NPN/PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
3,058 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
|
RN2602(TE85L,F)TRANS 2PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
3,075 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
|
RN2607(TE85L,F)TRANS 2PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
2,049 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
RN1902FE,LF(CTTRANS 2NPN PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage |
3,236 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 1kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount |
|
RN4985,LF(CTTRANS NPN/PNP PREBIAS 0.2W US6 Toshiba Semiconductor and Storage |
3,886 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 2.2kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100µA (ICBO) | 250MHz, 200MHz | 200mW | Surface Mount |
|
|
RN2906,LFTRANS 2PNP PREBIAS 0.2W US6 Toshiba Semiconductor and Storage |
2,742 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount |
|
|
RN1902,LF(CTTRANS 2NPN PREBIAS 0.2W US6 Toshiba Semiconductor and Storage |
3,778 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount |
|
|
RN1602(TE85L,F)TRANS 2NPN PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
2,800 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 300mW | Surface Mount |
|
|
RN2502(TE85L,F)TRANS 2PNP PREBIAS 0.3W SMV Toshiba Semiconductor and Storage |
3,455 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
|
RN2608(TE85L,F)TRANS 2PNP PREBIAS 0.3W SM6 Toshiba Semiconductor and Storage |
3,305 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 PNP - Pre-Biased (Dual) | 100mA | 50V | 22kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount |
|
|
RN1910,LF(CTTRANS 2NPN PREBIAS 0.1W US6 Toshiba Semiconductor and Storage |
2,478 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 NPN - Pre-Biased (Dual) | 100mA | 50V | 4.7kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount |
|
RN49A2,LF(CTTRANS NPN/PNP PREBIAS 0.2W US6 Toshiba Semiconductor and Storage |
2,897 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 47kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100µA (ICBO) | 250MHz, 200MHz | 200mW | Surface Mount | |
|
|
RN4984FE,LF(CTTRANS NPN/PNP PREBIAS 0.1W ES6 Toshiba Semiconductor and Storage |
3,474 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 NPN, 1 PNP - Pre-Biased (Dual) | 100mA | 50V | 47kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount |
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