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Транзисторы - биполярные (BJT) - одиночные, предварительно смещенные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | Resistor-Base(R1) | Resistor-EmitterBase(R2) | DCCurrentGain(hFE)(Min)@IcVce | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | Frequency-Transition | Power-Max | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PDTC114EQBZPDTC114EQB/SOT8015/DFN1110D-3 Nexperia USA Inc. |
2,463 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 100mV @ 500µA, 10mA | 100nA | 180 MHz | 340 mW | Surface Mount, Wettable Flank |
|
FJY3002R0.1A, 50V, NPN Fairchild Semiconductor |
3,095 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
FJV3103RMTF0.1A, 50V, NPN Fairchild Semiconductor |
2,086 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 22 kOhms | 22 kOhms | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
FJN4305RTA0.1A, 50V, PNP, TO-92 Fairchild Semiconductor |
3,147 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 300 mW | Through Hole |
|
BCR146E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,475 | - |
RFQ |
Технические |
Bulk | Automotive, AEC-Q101 | Active | NPN - Pre-Biased | 70 mA | 50 V | 47 kOhms | 22 kOhms | 50 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150 MHz | 200 mW | Surface Mount |
|
|
BCR198E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,936 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
FJY3004R-ON0.1A, 50V, NPN onsemi |
3,253 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 47 kOhms | 47 kOhms | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
FJX4006RTF0.1A, 50V, PNP Fairchild Semiconductor |
2,456 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 10 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 200 mW | Surface Mount |
|
|
FJV3110RMTF-ON0.1A, 40V, NPN onsemi |
2,522 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 40 V | 10 kOhms | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
DTC113ZCA-TPTRANS PREBIAS NPN 200MW SOT23-3L Micro Commercial Co |
3,241 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | NPN - Pre-Biased | 100 mA | - | 1 kOhms | 10 kOhms | 33 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250 MHz | 200 mW | Surface Mount |
|
MUN2136T1GTRANS PREBIAS PNP 230MW SC59 onsemi |
2,638 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 100 kOhms | 100 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 230 mW | Surface Mount |
|
|
BCR191E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,468 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
BCR196E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,427 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 70 mA | 50 V | 47 kOhms | 22 kOhms | 50 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150 MHz | 200 mW | Surface Mount |
|
|
FJY3004R0.1A, 50V, NPN Fairchild Semiconductor |
2,731 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 47 kOhms | 47 kOhms | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
BCR129FE6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,375 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
BCR 162 E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
2,681 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
BCR185E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,278 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
PDTB143EQA147PDTB143EQA SMALL SIGNAL FET NXP USA Inc. |
2,350 | - |
RFQ |
Технические |
Bulk | PDTB143 | Active | PNP - Pre-Biased | 500 mA | 50 V | 4.7 kOhms | 4.7 kOhms | 60 @ 50mA, 5V | 100mV @ 2.5mA, 50mA | 500nA | 150 MHz | 325 mW | Surface Mount |
|
|
BCR 198 E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,914 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
FJX4006RTF-ON0.1A, 50V, PNP onsemi |
2,523 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 10 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 200 mW | Surface Mount |
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