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Транзисторы - биполярные (BJT) - одиночные, предварительно смещенные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | Resistor-Base(R1) | Resistor-EmitterBase(R2) | DCCurrentGain(hFE)(Min)@IcVce | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | Frequency-Transition | Power-Max | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BCR158WE6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
2,767 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
BCR196TE6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,158 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
BCR183WE6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,489 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 250 mW | Surface Mount |
|
BCR142E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,971 | - |
RFQ |
Технические |
Bulk | Automotive, AEC-Q101 | Active | NPN - Pre-Biased | 100 mA | 50 V | 22 kOhms | 47 kOhms | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150 MHz | 200 mW | Surface Mount |
|
BCR141WH6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,389 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 22 kOhms | 22 kOhms | 50 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 130 MHz | 250 mW | Surface Mount |
|
|
BCR166E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,031 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 47 kOhms | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 160 MHz | 200 mW | Surface Mount |
|
|
BCR158WBIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
2,988 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 2.2 kOhms | 47 kOhms | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 250 mW | Surface Mount |
|
|
BCR166WE6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,847 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
BCR562E6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
2,272 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
BCR148WH6327BIPOLAR DIGITAL TRANSISTOR Infineon Technologies |
3,818 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 47 kOhms | 47 kOhms | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 100 MHz | 250 mW | Surface Mount |
|
FJV4114RMTF0.1A, 50V, PNP Fairchild Semiconductor |
2,273 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 200 mW | Surface Mount |
|
FJX3014RTF0.1A, 50V, NPN Fairchild Semiconductor |
3,913 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
FJV4113RMTF0.1A, 50V, PNP Fairchild Semiconductor |
2,744 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 2.2 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 200 mW | Surface Mount |
|
PDTA114TE,1150.1A, 50V, PNP Philips |
3,983 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 10 kOhms | - | 200 @ 1mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 150 mW | Surface Mount |
|
FJN3305RTA0.1A, 50V, NPN, TO-92 Fairchild Semiconductor |
3,681 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250 MHz | 300 mW | Through Hole |
|
FJV3110RMTF0.1A, 40V, NPN Fairchild Semiconductor |
2,456 | - |
RFQ |
Технические |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 40 V | 10 kOhms | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
|
FJN4301RTA0.1A, 50V, PNP, TO-92 Fairchild Semiconductor |
3,238 | - |
RFQ |
Технические |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 4.7 kOhms | 20 @ 10mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200 MHz | 300 mW | Through Hole |
|
|
PDTA114EE,1150.1A, 50V, PNP Philips |
2,820 | - |
RFQ |
Bulk | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 150mV @ 500µA, 10mA | 100nA (ICBO) | 180 MHz | 150 mW | Surface Mount | |
|
PDTC114EK,115NPN RESISTOR-EQUIPPED TRANSISTOR Philips |
2,389 | - |
RFQ |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 250 mW | Surface Mount | |
|
|
PDTC114EE,1150.1A, 50V, NPN, SC-75 Philips |
3,484 | - |
RFQ |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | 230 MHz | 150 mW | Surface Mount |
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