Транзисторы - биполярные (BJT) - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SC2235-Y(6MBH1,AF

2SC2235-Y(6MBH1,AF

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,421 -

RFQ

2SC2235-Y(6MBH1,AF

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(DNSO,AF)

2SC2235-Y(DNSO,AF)

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,392 -

RFQ

2SC2235-Y(DNSO,AF)

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(MBSH1,FM

2SC2235-Y(MBSH1,FM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,698 -

RFQ

2SC2235-Y(MBSH1,FM

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6CANOFM

2SC2235-Y(T6CANOFM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,315 -

RFQ

2SC2235-Y(T6CANOFM

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6CN,A,F

2SC2235-Y(T6CN,A,F

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,479 -

RFQ

2SC2235-Y(T6CN,A,F

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6FJT,AF

2SC2235-Y(T6FJT,AF

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,452 -

RFQ

2SC2235-Y(T6FJT,AF

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6FJT,FM

2SC2235-Y(T6FJT,FM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,821 -

RFQ

2SC2235-Y(T6FJT,FM

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6KMATFM

2SC2235-Y(T6KMATFM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,749 -

RFQ

2SC2235-Y(T6KMATFM

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6ND,AF

2SC2235-Y(T6ND,AF

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,284 -

RFQ

2SC2235-Y(T6ND,AF

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y(T6OMI,FM

2SC2235-Y(T6OMI,FM

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,173 -

RFQ

2SC2235-Y(T6OMI,FM

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,F(J

2SC2235-Y,F(J

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,014 -

RFQ

2SC2235-Y,F(J

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,T6ASHF(J

2SC2235-Y,T6ASHF(J

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,548 -

RFQ

2SC2235-Y,T6ASHF(J

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,T6F(J

2SC2235-Y,T6F(J

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,701 -

RFQ

2SC2235-Y,T6F(J

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,T6KEHF(M

2SC2235-Y,T6KEHF(M

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,858 -

RFQ

2SC2235-Y,T6KEHF(M

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,T6USNF(M

2SC2235-Y,T6USNF(M

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,190 -

RFQ

2SC2235-Y,T6USNF(M

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2235-Y,USNHF(M

2SC2235-Y,USNHF(M

TRANS NPN 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,373 -

RFQ

2SC2235-Y,USNHF(M

Технические

Bulk - Obsolete NPN 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SC2383-O(T6OMI,FM

2SC2383-O(T6OMI,FM

TRANS NPN 160V 1A TO92MOD

Toshiba Semiconductor and Storage
2,297 -

RFQ

2SC2383-O(T6OMI,FM

Технические

Bulk - Obsolete NPN 1 A 160 V 1.5V @ 50mA, 500mA 1µA (ICBO) 60 @ 200mA, 5V 900 mW 100MHz 150°C (TJ) Through Hole
2SC2383-O,T6ALPF(M

2SC2383-O,T6ALPF(M

TRANS NPN 160V 1A TO92MOD

Toshiba Semiconductor and Storage
2,365 -

RFQ

2SC2383-O,T6ALPF(M

Технические

Bulk - Obsolete NPN 1 A 160 V 1.5V @ 50mA, 500mA 1µA (ICBO) 60 @ 200mA, 5V 900 mW 100MHz 150°C (TJ) Through Hole
2SC2383-Y(T6DNS,FM

2SC2383-Y(T6DNS,FM

TRANS NPN 160V 1A TO92MOD

Toshiba Semiconductor and Storage
2,933 -

RFQ

2SC2383-Y(T6DNS,FM

Технические

Bulk - Obsolete NPN 1 A 160 V 1.5V @ 50mA, 500mA 1µA (ICBO) 60 @ 200mA, 5V 900 mW 100MHz 150°C (TJ) Through Hole
2SC2383-Y,T6KEHF(M

2SC2383-Y,T6KEHF(M

TRANS NPN 160V 1A TO92MOD

Toshiba Semiconductor and Storage
3,571 -

RFQ

2SC2383-Y,T6KEHF(M

Технические

Bulk - Obsolete NPN 1 A 160 V 1.5V @ 50mA, 500mA 1µA (ICBO) 60 @ 200mA, 5V 900 mW 100MHz 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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