Транзисторы - биполярные (BJT) - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SC4487S-AN

2SC4487S-AN

TRANS NPN 50V 0.3A 3NMP

onsemi
2,295 -

RFQ

2SC4487S-AN

Технические

Bulk - Active NPN 300 mA 50 V 500mV @ 100mA, 2A 1µA (ICBO) 140 @ 100mA, 2V 1 W 150MHz 150°C (TJ) Through Hole
NSV60201SMTWTBG

NSV60201SMTWTBG

TRANS NPN 60V 2A 6WDFN

onsemi
2,834 -

RFQ

NSV60201SMTWTBG

Технические

Bulk - Active NPN 2 A 60 V 250mV @ 200mA, 2A 100nA (ICBO) 150 @ 100mA, 2V 1.8 W 180MHz -55°C ~ 150°C (TJ) Surface Mount
NSV60200SMTWTBG

NSV60200SMTWTBG

TRANS PNP 60V 2A 6WDFN

onsemi
3,485 -

RFQ

NSV60200SMTWTBG

Технические

Bulk - Active PNP 2 A 60 V 450mV @ 200mA, 2A 100nA (ICBO) 150 @ 100mA, 2V 1.8 W 155MHz -55°C ~ 150°C (TJ) Surface Mount
2SC4487T-AN

2SC4487T-AN

TRANS NPN 50V 0.3A 3NMP

onsemi
2,924 -

RFQ

2SC4487T-AN

Технические

Bulk - Active NPN 300 mA 50 V 500mV @ 100mA, 2A 1µA (ICBO) 200 @ 100mA, 2V 1 W 150MHz 150°C (TJ) Through Hole
2SC6043-AE

2SC6043-AE

2SC6043 - 50 V, 2 A, LOW VCE NPN

onsemi
2,166 -

RFQ

2SC6043-AE

Технические

Bulk - Active NPN 2 A 50 V 300mV @ 50mA, 1A 1µA (ICBO) 200 @ 100mA, 2V 1 W 420MHz 150°C (TJ) Through Hole
BD1396STU

BD1396STU

TRANS NPN 80V 1.5A TO126-3

onsemi
2,058 -

RFQ

BD1396STU

Технические

Bulk - Active NPN 1.5 A 80 V 500mV @ 50mA, 500mA 100nA (ICBO) 40 @ 150mA, 2V 1.25 W - 150°C (TJ) Through Hole
NSS1C200MZ4T3G

NSS1C200MZ4T3G

TRANS PNP 100V 2A SOT223

onsemi
2,574 -

RFQ

NSS1C200MZ4T3G

Технические

Bulk - Active PNP 2 A 100 V 220mV @ 200mA, 2A 100nA (ICBO) 120 @ 500mA, 2V 800 mW 120MHz -55°C ~ 150°C (TJ) Surface Mount
2SA1552T-H

2SA1552T-H

2SA1552 - SMALL SIGNAL BIPOLAR T

onsemi
3,405 -

RFQ

2SA1552T-H

Технические

Bulk - Active PNP 1.5 A 160 V 500mV @ 50mA, 500mA 1µA (ICBO) 200 @ 100mA, 5V 1 W 120MHz 150°C (TJ) Through Hole
BD236STU

BD236STU

TRANS PNP 60V 2A TO126-3

onsemi
3,893 -

RFQ

BD236STU

Технические

Bulk - Active PNP 2 A 60 V 600mV @ 100mA, 1A 100nA (ICBO) 25 @ 1A, 2V 25 W 3MHz 150°C (TJ) Through Hole
2SC4080E-TD-E

2SC4080E-TD-E

2SC4080 - NPN EPITAXIAL PLANAR S

onsemi
3,721 -

RFQ

Bulk * Active - - - - - - - - - -
2SA1689E-AA

2SA1689E-AA

2SA1689 - SMALL SIGNAL BIPOLAR T

onsemi
3,470 -

RFQ

2SA1689E-AA

Технические

Bulk * Active - - - - - - - - - -
2SC4080D-TD-E

2SC4080D-TD-E

2SC4080 - NPN EPITAXIAL PLANAR S

onsemi
2,494 -

RFQ

2SC4080D-TD-E

Технические

Bulk * Active - - - - - - - - - -
BD437S

BD437S

TRANS NPN 45V 4A TO126-3

onsemi
2,447 -

RFQ

BD437S

Технические

Bulk - Active NPN 4 A 45 V 600mV @ 200mA, 2A 100µA 30 @ 10mA, 5V 36 W 3MHz 150°C (TJ) Through Hole
NSV9435T1G

NSV9435T1G

PNP BIPOLAR DIGITAL TRANSISTOR (

onsemi
2,182 -

RFQ

NSV9435T1G

Технические

Bulk * Active - - - - - - - - - -
TIP31CTU

TIP31CTU

TRANS NPN 100V 3A TO220-3

onsemi
3,420 -

RFQ

TIP31CTU

Технические

Bulk - Active NPN 3 A 100 V 1.2V @ 375mA, 3A 300µA 10 @ 3A, 4V 2 W 3MHz 150°C (TJ) Through Hole
FJE3303H2TU

FJE3303H2TU

TRANS NPN 400V 1.5A TO126-3

onsemi
2,173 -

RFQ

FJE3303H2TU

Технические

Bulk - Active NPN 1.5 A 400 V 3V @ 500mA, 1.5A 10µA (ICBO) 14 @ 500mA, 2V 20 W 4MHz 150°C (TJ) Through Hole
2SD734E-AA

2SD734E-AA

NPN EPITAXIAL PLANAR SILICON TRA

onsemi
2,206 -

RFQ

2SD734E-AA

Технические

Bulk * Active - - - - - - - - - -
2SD734E

2SD734E

2SD734 - NPN EPITAXIAL PLANAR SI

onsemi
2,510 -

RFQ

2SD734E

Технические

Bulk * Active - - - - - - - - - -
MJD2955TF

MJD2955TF

TRANS PNP 60V 10A DPAK

onsemi
3,931 -

RFQ

MJD2955TF

Технические

Bulk - Active PNP 10 A 60 V 8V @ 3.3A, 10A 50µA 20 @ 4A, 4V 1.75 W 2MHz 150°C (TJ) Surface Mount
KSH210TF

KSH210TF

TRANS PNP 25V 5A TO252-3

onsemi
3,824 -

RFQ

KSH210TF

Технические

Bulk - Active PNP 5 A 25 V 1.8V @ 1A, 5A 100nA (ICBO) 70 @ 500mA, 1V 1.4 W 65MHz 150°C (TJ) Surface Mount
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