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Транзисторы - FET, MOSFET - массивы
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQ1539EH-T1_GE3MOSFET N/P-CH 30V POWERPAKSC70-6 Vishay Siliconix |
2,650 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Standard | 30V | 850mA (Tc) | 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V | 2.6V @ 250µA | 1.4nC @ 4.5V, 1.6nC @ 4.5V | 48pF @ 15V, 50pF @ 15V | 1.5W | -55°C ~ 175°C (TJ) | Surface Mount |
|
SI1902DL-T1-GE3MOSFET 2N-CH 20V 0.66A SC-70-6 Vishay Siliconix |
2,232 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 660mA | 385mOhm @ 660mA, 4.5V | 1.5V @ 250µA | 1.2nC @ 4.5V | - | 270mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1902DL-T1-E3MOSFET 2N-CH 20V 0.66A SC70-6 Vishay Siliconix |
3,231 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 660mA | 385mOhm @ 660mA, 4.5V | 1.5V @ 250µA | 1.2nC @ 4.5V | - | 270mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIA527DJ-T1-GE3MOSFET N/P-CH 12V 4.5A SC-70-6 Vishay Siliconix |
3,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 12V | 4.5A | 29mOhm @ 5A, 4.5V | 1V @ 250µA | 15nC @ 8V | 500pF @ 6V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI5935CDC-T1-E3MOSFET 2P-CH 20V 4A 1206-8 Vishay Siliconix |
3,530 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Standard | 20V | 4A | 100mOhm @ 3.1A, 4.5V | 1V @ 250µA | 11nC @ 5V | 455pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1900DL-T1-E3MOSFET 2N-CH 30V 0.59A SC70-6 Vishay Siliconix |
3,633 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 590mA | 480mOhm @ 590mA, 10V | 3V @ 250µA | 1.4nC @ 10V | - | 270mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA906EDJ-T1-GE3MOSFET 2N-CH 20V 4.5A SC70-6 Vishay Siliconix |
2,676 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 46mOhm @ 3.9A, 4.5V | 1.4V @ 250µA | 12nC @ 10V | 350pF @ 10V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA517DJ-T1-GE3MOSFET N/P-CH 12V 4.5A SC-70-6 Vishay Siliconix |
2,892 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 12V | 4.5A | 29mOhm @ 5A, 4.5V | 1V @ 250µA | 15nC @ 8V | 500pF @ 6V | 6.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA923AEDJ-T1-GE3MOSFET 2P-CH 20V 4.5A SC70-6L Vishay Siliconix |
3,241 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 54mOhm @ 3.8A, 4.5V | 900mV @ 250µA | 25nC @ 8V | 770pF @ 10V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI3932DV-T1-GE3MOSFET 2N-CH 30V 3.7A 6-TSOP Vishay Siliconix |
3,074 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.7A | 58mOhm @ 3.4A, 10V | 2.2V @ 250µA | 6nC @ 10V | 235pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA910EDJ-T1-GE3MOSFET 2N-CH 12V 4.5A SC-70-6 Vishay Siliconix |
3,568 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 12V | 4.5A | 28mOhm @ 5.2A, 4.5V | 1V @ 250µA | 16nC @ 8V | 455pF @ 6V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4214DDY-T1-GE3MOSFET 2N-CH 30V 8.5A 8-SOIC Vishay Siliconix |
2,756 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8.5A | 19.5mOhm @ 8A, 10V | 2.5V @ 250µA | 22nC @ 10V | 660pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4532CDY-T1-GE3MOSFET N/P-CH 30V 6A 8-SOIC Vishay Siliconix |
2,351 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Standard | 30V | 6A, 4.3A | 47mOhm @ 3.5A, 10V | 3V @ 250µA | 9nC @ 10V | 305pF @ 15V | 2.78W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI3552DV-T1-E3MOSFET N/P-CH 30V 6TSOP Vishay Siliconix |
2,389 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 30V | 2.5A | 105mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.2nC @ 5V | - | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4804CDY-T1-GE3MOSFET 2N-CH 30V 8A 8SOIC Vishay Siliconix |
3,067 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 30V | 8A | 22mOhm @ 7.5A, 10V | 2.4V @ 250µA | 23nC @ 10V | 865pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI3590DV-T1-E3MOSFET N/P-CH 30V 2.5A 6TSOP Vishay Siliconix |
3,383 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 30V | 2.5A, 1.7A | 77mOhm @ 3A, 4.5V | 1.5V @ 250µA | 4.5nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI6968BEDQ-T1-GE3MOSFET 2N-CH 20V 5.2A 8-TSSOP Vishay Siliconix |
2,569 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 5.2A | 22mOhm @ 6.5A, 4.5V | 1.6V @ 250µA | 18nC @ 4.5V | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI3552DV-T1-GE3MOSFET N/P-CH 30V 6-TSOP Vishay Siliconix |
3,587 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 30V | 2.5A | 105mOhm @ 2.5A, 10V | 1V @ 250µA (Min) | 3.2nC @ 5V | - | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI5515CDC-T1-E3MOSFET N/P-CH 20V 4A 1206-8 Vishay Siliconix |
3,479 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 20V | 4A (Tc) | 36mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4599DY-T1-GE3MOSFET N/P-CH 40V 6.8A 8SOIC Vishay Siliconix |
3,659 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 40V | 6.8A, 5.8A | 35.5mOhm @ 5A, 10V | 3V @ 250µA | 20nC @ 10V | 640pF @ 20V | 3W, 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
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