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Транзисторы - FET, MOSFET - массивы
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD310704SCLMOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. |
2,662 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
|
SLA5061MOSFET 3N/3P-CH 60V 10A/6A 12SIP Sanken |
2,561 | - |
RFQ |
Технические |
Bulk | - | Active | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 10A, 6A | 140mOhm @ 5A, 4V | - | - | 460pF @ 10V | 5W | 150°C (TJ) | Through Hole |
|
ALD114904APALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
2,819 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD114904ASALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,412 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD212900ASALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
3,602 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD210800PCLMOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. |
2,775 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD114804PCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
3,068 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD210802PCLMOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. |
3,017 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD210802SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
3,880 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD210804PCLMOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. |
2,347 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD210804SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
2,097 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD210814PCLMOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. |
3,446 | - |
RFQ |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | - | - | Through Hole | |
|
|
ALD210814SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
2,936 | - |
RFQ |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Surface Mount | |
|
|
ALD114813PCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
2,343 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD310700PCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
2,907 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD310702PCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
3,507 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD1102BSALMOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,812 | - |
RFQ |
Технические |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1101BSALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
3,540 | - |
RFQ |
Технические |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 40mA | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD212914PALMOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. |
3,262 | - |
RFQ |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Through Hole | |
|
|
ALD212914SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
3,693 | - |
RFQ |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Surface Mount |
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