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Транзисторы - FET, MOSFET - массивы
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD1115SALMOSFET N/P-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,063 | - |
RFQ |
Технические |
Tube | - | Active | N and P-Channel Complementary | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110904SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,688 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD110800SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
2,172 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110908SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,794 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110914SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
3,453 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110808SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
2,885 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD114935SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,064 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD110902PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,667 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110904PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
2,143 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD111933PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
2,129 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD114904PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,512 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD114913PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,174 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD212900SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
3,331 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 20mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD212902PALMOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. |
3,136 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD212902SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
3,688 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD212904PALMOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. |
3,029 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD212904SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
2,080 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD212908PALMOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. |
3,316 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD212908SALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
2,338 | - |
RFQ |
Технические |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110908PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,745 | - |
RFQ |
Технические |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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