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Транзисторы - FET, MOSFET - массивы
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7304TRMOSFET 2P-CH 20V 4.3A 8-SOIC Infineon Technologies |
2,710 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7306TRMOSFET 2P-CH 30V 3.6A 8-SOIC Infineon Technologies |
3,436 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7311TRMOSFET 2N-CH 20V 6.6A 8-SOIC Infineon Technologies |
3,051 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7316TRMOSFET 2P-CH 30V 4.9A 8-SOIC Infineon Technologies |
2,947 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7324MOSFET 2P-CH 20V 9A 8-SOIC Infineon Technologies |
3,580 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 9A | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
94-3449MOSFET 2P-CH 55V 3.4A 8-SOIC Infineon Technologies |
3,059 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7379MOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
2,555 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7389MOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
3,600 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | N and P-Channel | Logic Level Gate | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7503TRMOSFET 2N-CH 30V 2.4A MICRO8 Infineon Technologies |
2,336 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 2.4A | 135mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 1.25W | - | Surface Mount |
|
|
IRF7504TRMOSFET 2P-CH 20V 1.7A MICRO8 Infineon Technologies |
2,878 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.7A | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7506TRMOSFET 2P-CH 30V 1.7A MICRO8 Infineon Technologies |
3,382 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.7A | 270mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 1.25W | - | Surface Mount |
|
|
IRF7507TRMOSFET N/P-CH 20V MICRO8 Infineon Technologies |
2,275 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N and P-Channel | Logic Level Gate | 20V | 2.4A, 1.7A | 140mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | 1.25W | - | Surface Mount |
|
|
IRF7509TRMOSFET N/P-CH 30V 2.7A/2A MICRO8 Infineon Technologies |
3,232 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | N and P-Channel | Logic Level Gate | 30V | 2.7A, 2A | 110mOhm @ 1.4A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7530TRMOSFET 2N-CH 20V 5.4A MICRO8 Infineon Technologies |
3,332 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | 2 N-Channel (Dual) | Standard | 20V | 5.4A | 30mOhm @ 5.4A, 4.5V | 1.2V @ 250µA | 26nC @ 4.5V | 1310pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7555TRMOSFET 2P-CH 20V 4.3A MICRO8 Infineon Technologies |
2,965 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | 1066pF @ 10V | 1.25W | - | Surface Mount |
|
|
IRF7379TRMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
2,829 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7389TRMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
3,251 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N and P-Channel | Logic Level Gate | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7901D1MOSFET 2N-CH 30V 6.2A 8SOIC Infineon Technologies |
3,767 | - |
RFQ |
Технические |
Tube | FETKY™ | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.2A | 38mOhm @ 5A, 4.5V | 1V @ 250µA | 10.5nC @ 5V | 780pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7901D1TRMOSFET 2N-CH 30V 6.2A 8SOIC Infineon Technologies |
3,083 | - |
RFQ |
Технические |
Tape & Reel (TR) | FETKY™ | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.2A | 38mOhm @ 5A, 4.5V | 1V @ 250µA | 10.5nC @ 5V | 780pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9952TRMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
2,114 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
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