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Транзисторы - FET, MOSFET - массивы
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSG0810NDIATMA1MOSFET 2N-CH 25V 19A/39A 8TISON Infineon Technologies |
2,026 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 39A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1040pF @ 12V | 2.5W | -55°C ~ 155°C (TJ) | Surface Mount |
|
AUIRF7316QTRMOSFET 2P-CH 30V 4.9A 8SOIC Infineon Technologies |
3,097 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 58mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
FS45MR12W1M1B11BOMA1MOSFET MODULE 1200V 50A Infineon Technologies |
2,950 | - |
RFQ |
Технические |
Tray | CoolSiC™+ | Last Time Buy | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
FF2MR12KM1PHOSA1MEDIUM POWER 62MM Infineon Technologies |
3,661 | - |
RFQ |
Технические |
Tray | CoolSiC™ | Last Time Buy | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
FF3MR12KM1PHOSA1MEDIUM POWER 62MM Infineon Technologies |
2,494 | - |
RFQ |
Технические |
Tray | CoolSiC™ | Last Time Buy | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 375A (Tc) | 2.83mOhm @ 375A, 15V | 5.15V @ 168mA | 1000nC @ 15V | 29800pF @ 25V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
FF3MR12KM1HOSA1MEDIUM POWER 62MM Infineon Technologies |
3,904 | - |
RFQ |
Технические |
Tray | CoolSiC™ | Last Time Buy | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 375A (Tc) | 2.83mOhm @ 375A, 15V | 5.15V @ 168mA | 1000nC @ 15V | 29800pF @ 25V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
FF6MR12KM1PHOSA1MEDIUM POWER 62MM Infineon Technologies |
2,808 | - |
RFQ |
Технические |
Tray | CoolSiC™ | Last Time Buy | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 250A (Tc) | 5.81mOhm @ 250A, 15V | 5.15V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
BSO330N02KGN-CHANNEL POWER MOSFET Infineon Technologies |
2,536 | - |
RFQ |
Технические |
Bulk | OptiMOS™ | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.4A | 30mOhm @ 6.5A, 4.5V | 1.2V @ 20µA | 4.9nC @ 4.5V | 730pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO211PH3.2A, 20V, 0.067OHM, 2-ELEMENT Infineon Technologies |
2,608 | - |
RFQ |
Технические |
Bulk | OptiMOS™ P | Active | 2 P-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 4A (Ta) | 67mOhm @ 4.6A, 4.5V | 1.2V @ 25µA | 10nC @ 4.5V | 1095pF @ 15V | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPB13N03LBGOPTLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
999 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
BSO303PH7A, 30V, 0.021OHM, 2-ELEMENT, P Infineon Technologies |
3,808 | - |
RFQ |
Технические |
Bulk | OptiMOS™ | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 7A (Tc) | 21mOhm @ 8.2A, 10V | 2V @ 100µA | 49nC @ 10V | 2678pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPU80R750P7AKMA1-NDCOOLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
3,145 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
IPA126N10N3G35A, 100V, 0.0126OHM, N-CHANNEL Infineon Technologies |
3,538 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPA60R600E6600V, 0.6OHM, N-CHANNEL, MOSFET Infineon Technologies |
640 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPB65R280E6OPTLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
3,165 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
SPA20N60CFDPOWER FIELD-EFFECT TRANSISTOR, 2 Infineon Technologies |
111 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF7307TRPBFMOSFET N/P-CH 20V 8-SOIC Infineon Technologies |
877 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | N and P-Channel | Logic Level Gate | 20V | 5.2A, 4.3A | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
FF45MR12W1M1B11BOMA1MOSFET MODULE 1200V 50A Infineon Technologies |
2,176 | - |
RFQ |
Технические |
Tray | CoolSiC™+ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
DF11MR12W1M1B11BPSA1MOSFET MOD 1200V 50A Infineon Technologies |
3,065 | - |
RFQ |
Технические |
Tray | CoolSiC™+ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3680pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount |
|
F415MR12W2M1B76BOMA1LOW POWER EASY AG-EASY2B-2 Infineon Technologies |
2,357 | - |
RFQ |
Tray | EasyPACK™ CoolSiC™ | Last Time Buy | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 75A (Tj) | 15mOhm @ 75A, 15V | 5.55V @ 30mA | 186nC @ 15V | 5520pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount |
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