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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MRF8S21100HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor	905	-	RFQ	Технические	Bulk	-	Active	LDMOS	2.11GHz ~ 2.17GHz	18.3dB	28 V	10µA	-	700 mA	24W	65 V
ART1K6FHGJ ART1K6FHG/SOT1248/REELDP Ampleon USA Inc.	100	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	ART	Active	LDMOS (Dual), Common Source	1MHz ~ 425MHz	28dB	65 V	1.2µA	-	600 mA	1600W	177 V
MRF8S21200HR6 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor	292	-	RFQ	Технические	Bulk	-	Active	LDMOS (Dual)	2.14GHz	18.1dB	28 V	-	-	1.4 A	48W	65 V
MRF6V4300NBR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	442	-	RFQ	Технические	Bulk	-	Active	LDMOS	10MHz ~ 600MHz	22dB	50 V	2.5mA	-	900 mA	300W	110 V
CGH40090PP RF MOSFET HEMT 28V 440199 Wolfspeed, Inc.	301	-	RFQ	Технические	Tube	GaN	Active	HEMT	0Hz ~ 4GHz	12.5dB	28 V	28A	-	1 A	100W	84 V
MRF8S18120HSR3 RF L BAND, N-CHANNEL Freescale Semiconductor	2,316	-	RFQ	Технические	Bulk	-	Active	LDMOS	1.81GHz	18.2dB	28 V	-	-	800 mA	72W	65 V
MRFE6S9200HR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	921	-	RFQ	Технические	Bulk	-	Active	LDMOS	880MHz	21dB	28 V	-	-	1.4 A	58W	66 V
GTVA311801FA-V1-R250 GAN HEMT 50V 180W 2.7-3.1GHZ Wolfspeed, Inc.	250	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	GaN	Active	HEMT	2.7GHz ~ 3.1GHz	15dB	50 V	-	-	20 mA	180W	125 V
MRF8P20161HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor	3,124	-	RFQ	Технические	Bulk	-	Active	LDMOS (Dual)	1.92GHz	16.4dB	28 V	-	-	550 mA	37W	65 V
MRF6S23140HR3 RF S BAND, N-CHANNEL Freescale Semiconductor	2,673	-	RFQ	Технические	Bulk	-	Active	LDMOS	2.3GHz ~ 2.4GHz	15.2dB	28 V	10µA	-	1.3 A	28W	68 V
MRF7S21150HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor	750	-	RFQ	Технические	Bulk	-	Active	LDMOS	2.11GHz ~ 2.17GHz	17.5dB	28 V	-	-	1.35 A	44W	65 V
MRF6S19140HR3 RF L BAND, N-CHANNEL Freescale Semiconductor	405	-	RFQ	Технические	Bulk	-	Active	LDMOS	1.93GHz ~ 1.99GHz	16dB	28 V	10µA	-	1.15 A	29W	68 V
MRF6S19140HR5 FET RF 68V 1.99GHZ NI-880 Freescale Semiconductor	183	-	RFQ		Bulk	-	Active	LDMOS	1.93GHz ~ 1.99GHz	16dB	28 V	-	-	1.15 A	29W	68 V
MRF8S21200HSR6 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor	139	-	RFQ	Технические	Bulk	-	Active	LDMOS (Dual)	2.14GHz	18.1dB	28 V	-	-	1.4 A	48W	65 V
CLL3H0914LS-700U CLL3H0914LS-700U Ampleon USA Inc.	3,316	-	RFQ	Технические	Tray	CLL	Active	N-Channel	900MHz ~ 1.4GHz	17dB	50 V	-	-	500 mA	700W	150 V
CLL3H0914L-700U CLL3H0914L-700U Ampleon USA Inc.	2,015	-	RFQ	Технические	Tray	CLL	Active	N-Channel	900MHz ~ 1.4GHz	17dB	50 V	-	-	500 mA	700W	150 V
CGHV14500F RF MOSFET HEMT 50V 440117 Wolfspeed, Inc.	2,530	-	RFQ	Технические	Tray	GaN	Active	HEMT	1.2GHz ~ 1.4GHz	17dB	50 V	36A	-	500 mA	500W	125 V
CGHV14500P 500W, GAN HEMT, 50V, 0.9-1.5GHZ Wolfspeed, Inc.	3,580	-	RFQ	Технические	Tray	GaN	Active	HEMT	1.2GHz ~ 1.4GHz	16.2dB	50 V	-	-	500 mA	500W	125 V
MRF6V12500HR5 FET RF 110V 1.03GHZ NI-780H NXP USA Inc.	210	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.03GHz	19.7dB	50 V	-	-	200 mA	500W	110 V
MRF7S21170HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor	937	-	RFQ	Технические	Bulk	-	Active	LDMOS	2.17GHz	16dB	28 V	-	-	1.4 A	50W	65 V