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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
CLF1G0035S-100P CLF1G0035S-100 - 100W BROADBAND Ampleon USA Inc.	2,884	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
MRFE6VP8600HR5 LDMOS BROADBAND RF POWER TRANSIS NXP Semiconductors	640	-	RFQ		Bulk	-	Obsolete	LDMOS (Dual), Common Source	470MHz ~ 860MHz	19.3dB	50 V	20µA	-	1.4 A	600W	130 V
MRF6V14300HSR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	387	-	RFQ	Технические	Bulk	-	Active	LDMOS	1.4GHz	18dB	50 V	-	-	150 mA	330W	100 V
AFV10700HR5 RF MOSFET LDMOS DL 50V NI-780-4 NXP USA Inc.	2,911	-	RFQ	Технические	Bulk	-	Active	LDMOS (Dual)	1.03GHz ~ 1.09GHz	19.2dB	50 V	1µA	-	100 mA	770W	105 V
AFV10700HR5178 AFV10700HR5 - AIRFAST RF POWER L NXP Semiconductors	3,862	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
AFV10700HSR5178 AFV10700HSR5 - AIRFAST RF POWER NXP Semiconductors	2,046	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
MMRF1006HR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	2,290	-	RFQ	Технические	Bulk	-	Active	LDMOS	450MHz	20dB	50 V	-	-	150 mA	1000W	120 V
BLA6H0912-500112 BLA6H0912-500 - LDMOS AVIONICS R NXP USA Inc.	2,264	-	RFQ	Технические	Tray	-	Not For New Designs	LDMOS	960MHz ~ 1.22GHz	17dB	50 V	54A	-	100 mA	450W	100 V
MWT-7F MED POWER GAAS MESFET Microwave Technology Inc.	2,646	-	RFQ	Технические	Case	-	Active	MESFET	500MHz ~ 26GHz	8dB	4 V	85mA	2dB @ 12GHz	85 mA	21dBm	6 V
BLF6G10L-260PRN:11 RF FET LDMOS 65V 22DB SOT539A Ampleon USA Inc.	2,104	-	RFQ	Технические	Tape & Reel (TR)	-	Obsolete	LDMOS (Dual), Common Source	917.5MHz ~ 962.5MHz	22dB	28 V	64A	-	1.8 A	40W	65 V
BLF6G10L-260PRN,11 RF FET LDMOS 65V 22DB SOT539A Ampleon USA Inc.	2,089	-	RFQ	Технические	Tray	-	Obsolete	LDMOS (Dual), Common Source	917.5MHz ~ 962.5MHz	22dB	28 V	64A	-	1.8 A	40W	65 V
BLF6G38LS-100,112 RF FET LDMOS 65V 13DB SOT502B Ampleon USA Inc.	2,135	-	RFQ	Технические	Tray	-	Obsolete	LDMOS	3.4GHz ~ 3.6GHz	13dB	28 V	34A	-	1.05 A	18.5W	65 V
BLF404,115 RF FET NCHA 40V 11.5DB SOT409A Ampleon USA Inc.	2,407	-	RFQ	Технические	Tape & Reel (TR)	-	Obsolete	N-Channel	500MHz	11.5dB	12.5 V	1.5A	-	50 mA	4W	40 V
BF1212WR,115 MOSFET N-CH DUAL GATE 6V SOT343R NXP USA Inc.	3,631	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	N-Channel Dual Gate	400MHz	30dB	5 V	30mA	0.9dB	12 mA	-	6 V
BLF2425M9LS30U RF FET LDMOS 65V 18.5DB SOT1135B Ampleon USA Inc.	2,828	-	RFQ	Технические	Tray	-	Active	LDMOS	2.45GHz	18.5dB	32 V	-	-	20 mA	30W	65 V
BLF188XRSU RF FET LDMOS 135V 24.4DB SOT539B Ampleon USA Inc.	3,816	-	RFQ	Технические	Tray	-	Active	LDMOS (Dual), Common Source	108MHz	24.4dB	50 V	-	-	40 mA	1400W	135 V
BLF647PS,112 RF FET LDMOS 65V 17DB SOT1121B Ampleon USA Inc.	2,437	-	RFQ	Технические	Tray	-	Active	LDMOS (Dual), Common Source	1.3GHz	17.5dB	32 V	-	-	100 mA	200W	65 V
BLF178XR,112 RF MOSFET LDMOS DL 50V SOT539A Ampleon USA Inc.	3,332	-	RFQ	Технические	Tray	-	Active	LDMOS (Dual), Common Source	108MHz	28dB	50 V	-	-	40 mA	1400W	110 V
BLM8G0710S-15PBGY RF FET LDMOS 65V 36.1DB SOT12122 Ampleon USA Inc.	100	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	957.5MHz	36.1dB	28 V	-	-	15 mA	1.5W	65 V
PD57018S-E FET RF 65V 945MHZ PWRSO10 STMicroelectronics	3,856	-	RFQ	Технические	Tube	-	Active	LDMOS	945MHz	16.5dB	28 V	2.5A	-	100 mA	18W	65 V