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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MWT-1F HIGH GAIN GAAS LIJESFET Microwave Technology Inc.	100	-	RFQ	Технические	Case	-	Active	MESFET	100MHz ~ 12GHz	7dB	4 V	230mA	2dB @ 12GHz	230 mA	-	6 V
MRF18030ALSR5 FET RF 65V 1.88GHZ NI-400S Freescale Semiconductor	3,511	-	RFQ		Bulk	-	Active	LDMOS	1.81GHz ~ 1.88GHz	14dB	26 V	-	-	250 mA	30W	65 V
CGHV60075D5-GP4 RF MOSFET HEMT 50V DIE Wolfspeed, Inc.	2,875	-	RFQ	Технические	Tray	GaN	Active	HEMT	6GHz	17dB	50 V	-	-	125 mA	75W	150 V
MRF7S19100NBR1 RF L BAND, N-CHANNEL , TO-272 Freescale Semiconductor	3,741	-	RFQ	Технические	Bulk	-	Active	LDMOS	1.93GHz ~ 1.99GHz	17.5dB	28 V	-	-	1 A	29W	65 V
MWT-PH9F MED POWER ALGAAS/INGAAS PHEMT Microwave Technology Inc.	100	-	RFQ	Технические	Case	-	Active	MESFET	26GHz	-	4 V	220mA	-	220 mA	27dBm	7 V
PTFC210202FC-V1-R0 IC AMP RF LDMOS H-37248-4 Wolfspeed, Inc.	3,235	-	RFQ	Технические	Strip	-	Not For New Designs	LDMOS (Dual)	2.2GHz	21dB	28 V	-	-	170 mA	5W	65 V
MRF8HP21080HR5 RF POWER N-CHANNEL, MOSFET Freescale Semiconductor	2,884	-	RFQ	Технические	Bulk	-	Obsolete	LDMOS (Dual)	2.17GHz	14.4dB	28 V	-	-	150 mA	16W	65 V
MRF5S21100HSR5 FET RF 65V 2.17GHZ NI-780S Freescale Semiconductor	2,286	-	RFQ		Bulk	-	Active	LDMOS	2.16GHz ~ 2.17GHz	13.5dB	28 V	-	-	1.05 A	23W	65 V
MWT-PH11F MEDPOWER ALGAAS/INGAAS PHEMT Microwave Technology Inc.	100	-	RFQ	Технические	Case	-	Active	MESFET	12GHz	9dB	3 V	950mA	-	950 mA	-	-
BLF6G15L-40BRN,112 RF PFET, 2-ELEMENT, L BAND, SILI NXP USA Inc.	2,710	-	RFQ	Технические	Tube	-	Active	LDMOS (Dual), Common Source	1.47GHz ~ 1.51GHz	22dB	28 V	11A	-	330 mA	2.5W	65 V
MRF6S27050HR5 RF 2.62GHZ, NI-780, MOSFET Freescale Semiconductor	3,451	-	RFQ		Bulk	-	Active	LDMOS	2.62GHz	16dB	28 V	-	-	500 mA	7W	68 V
MRF5S19100HR5 FET RF 65V 1.99GHZ NI-780 Freescale Semiconductor	3,565	-	RFQ		Bulk	-	Active	LDMOS	1.93GHz ~ 1.99GHz	13.9dB	28 V	-	-	1 A	22W	65 V
MRF5S19100HR FET RF 65V 1.99GHZ NI-780 Freescale Semiconductor	2,896	-	RFQ		Bulk	*	Active	-	-	-	-	-	-	-	-	-
BLF7G24L-100,112 RF TRANSISTOR NXP USA Inc.	3,585	-	RFQ	Технические	Tube	-	Obsolete	LDMOS	2.3GHz ~ 2.4GHz	18dB	28 V	28A	-	900 mA	20W	65 V
MRF5S21090HR5 FET RF 65V 2.11GHZ NI-780 Freescale Semiconductor	3,623	-	RFQ		Bulk	-	Active	LDMOS	2.11GHz	14.5dB	28 V	-	-	850 mA	19W	65 V
MRF5S19100HSR5 FET RF 65V 1.99GHZ NI-780S Freescale Semiconductor	3,428	-	RFQ		Bulk	-	Active	LDMOS	1.93GHz ~ 1.99GHz	13.9dB	28 V	-	-	1 A	22W	65 V
MRF6S21050LR5 FET RF 68V 2.16GHZ NI-400 Freescale Semiconductor	2,268	-	RFQ		Bulk	-	Active	LDMOS	2.16GHz	16dB	28 V	-	-	450 mA	11.5W	68 V
MRF6S21050LSR5 FET RF 68V 2.16GHZ NI-400S Freescale Semiconductor	3,757	-	RFQ		Bulk	-	Active	LDMOS	2.16GHz	16dB	28 V	-	-	450 mA	11.5W	68 V
BLF6G22LS-75112 LDMOS RF POWER TRANSISTOR Ampleon USA Inc.	3,415	-	RFQ	Технические	Bulk	BLF	Active	LDMOS	2GHz ~ 2.2GHz	18.7dB	28 V	3µA	-	690 mA	75W	65 V
BLF7G27LS-90P,112 RF PFET, 2-ELEMENT, S BAND, SILI NXP USA Inc.	3,341	-	RFQ	Технические	Tube	-	Active	LDMOS (Dual), Common Source	2.5GHz ~ 2.7GHz	18.5dB	28 V	18A	-	720 mA	16W	65 V