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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MRF1K50HR5 HIGH POWER RF TRANSISTOR NXP USA Inc.	138	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.8MHz ~ 500MHz	22.5dB	-	-	-	-	1500W	50 V
MRFE6VP61K25HR6 FET RF 2CH 133V 230MHZ NI-1230 NXP USA Inc.	569	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	24dB	50 V	-	-	100 mA	1250W	133 V
A2G35S200-01SR3 AIRFAST RF POWER GAN TRANSISTOR NXP USA Inc.	160	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	GaN HEMT	3.4GHz ~ 3.6GHz	16.1dB	48 V	-	-	291 mA	180W	125 V
A2T26H300-24SR6 IC TRANS RF LDMOS NXP USA Inc.	2,795	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS (Dual)	2.5GHz	14.5dB	28 V	-	-	800 mA	60W	65 V
MRFE6VP5150GNR1,528 WIDEBAND RF POWER LDMOS TRANSIST NXP USA Inc.	475	-	RFQ	Технические	Bulk	-	Active	LDMOS (Dual)	1.8MHz ~ 600MHz	26.1dB	50 V	5µA	-	100 mA	150W	133 V
MMRF1305HR5 FET RF 2CH 133V 512MHZ NI-780-4 NXP USA Inc.	2,086	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	512MHz	26dB	50 V	-	-	100 mA	100W	133 V
BLF7G24LS-140,118 N-CHANNEL, MOSFET NXP USA Inc.	970	-	RFQ	Технические	Bulk	-	Active	LDMOS	2.3GHz ~ 2.4GHz	18.5dB	28 V	28A	-	1.3 A	30W	65 V
BLF7G20LS-90P,112 RF PFET, 2-ELEMENT, L BAND, SILI NXP USA Inc.	100	-	RFQ	Технические	Tube	-	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	19.5dB	28 V	2µA	-	550 mA	90W	65 V
MMRF1310HR5 FET RF 2CH 133V 230MHZ NI780 NXP USA Inc.	2,693	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	26.5dB	50 V	-	-	100 mA	300W	133 V
CLF1G0060S-10 RF PFET, 1-ELEMENT, C BAND, GALL NXP USA Inc.	384	-	RFQ	Технические	Bulk	-	Active	GaN HEMT	6GHz	16dB	50 V	-	-	50 mA	10W	150 V
MRFX600HSR5 TRANS LDMOS 600W 400 MHZ 65V NXP USA Inc.	2,324	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	1.8MHz ~ 400MHz	26.4dB	65 V	10µA	-	100 mA	600W	179 V
MRFX600GSR5 TRANS LDMOS 600W 400 MHZ 65V NXP USA Inc.	3,541	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	1.8MHz ~ 400MHz	26.4dB	65 V	10µA	-	100 mA	600W	179 V
MRF1K50NR5 WIDEBAND RF POWER LDMOS TRANSIST NXP USA Inc.	127	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.8MHz ~ 500MHz	23dB	50 V	-	-	-	1500W	50 V
MRF6V12500HR5 FET RF 110V 1.03GHZ NI-780H NXP USA Inc.	210	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.03GHz	19.7dB	50 V	-	-	200 mA	500W	110 V
AFT26HW050GSR3-NXP RF N CHANNEL, MOSFET NXP USA Inc.	250	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
AFT26P100-4WSR3-NXP RF N CHANNEL, MOSFET NXP USA Inc.	140	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
CLF1G0035-100P RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc.	997	-	RFQ	Технические	Bulk	-	Active	HEMT	3.5GHz	12.5dB	50 V	-	-	330 mA	100W	150 V
BLA1011S-200,112 RF TRANSISTOR NXP USA Inc.	3,894	-	RFQ	Технические	Bulk	-	Obsolete	LDMOS	1.03GHz ~ 1.09GHz	13dB	36 V	-	-	150 mA	200W	75 V
BLS7G2933S-150,112 RF PFET, 1-ELEMENT, S BAND, SILI NXP USA Inc.	2,651	-	RFQ	Технические	Tube	-	Active	LDMOS	2.9GHz ~ 3.3GHz	13.5dB	32 V	4.2µA	-	100 mA	150W	60 V
AFM906NT1 RF MOSFET LDMOS 10.8V 16DFN NXP USA Inc.	174	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	136MHz ~ 941MHz	-	10.8 V	2µA	-	100 mA	6.8W	30 V