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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MRF101AN-START MRF101AN RF ESSENTIALS COMPONENT NXP USA Inc.	2,380	-	RFQ	Технические	Bulk	-	Obsolete	LDMOS	1.8MHz ~ 250MHz	21.1dB	50 V	10µA	-	100 mA	115W	133 V
TA9210D PA RF GAN PWR 12.5W .03-4GHZ 32V Tagore Technology	3,310	-	RFQ	Технические	Tray	-	Active	GaN HEMT	30MHz ~ 4GHz	18dB	32 V	700mA	-	50 mA	12.5W	120 V
TA9310E PA RF GAN PWR 20W .03-4GHZ 32V Tagore Technology	3,661	-	RFQ	Технические	Strip	-	Active	GaN HEMT	30MHz ~ 4GHz	17.5dB	32 V	-	-	100 mA	20W	120 V
WP2806008UH RF GaN HEMT 28V DC ~ 6GHZ, 8W WAVEPIA.,Co.Ltd	2,717	-	RFQ	Технические	Box	-	Active	GaN HEMT	6GHz	11dB	28 V	-	-	70 mA	6W	160 V
WP28020015 RF GaN HEMT 28V DIE DC~20GHZ, 15 WAVEPIA.,Co.Ltd	3,885	-	RFQ	Технические	Box	-	Active	GaN HEMT	15GHz	10dB	28 V	880mA	-	300 mA	15W	28 V
TA9410E PA RF GAN PWR 25W .03-4GHZ 50V Tagore Technology	2,572	-	RFQ	Технические	Tray	-	Active	GaN HEMT	20MHz ~ 3GHz	17dB	-	30A	-	-	25W	50 V
WP2806015UH RF GaN HEMT 28V DC ~ 6GHZ,15W WAVEPIA.,Co.Ltd	3,537	-	RFQ	Технические	Box	-	Active	GaN HEMT	6GHz	11.6dB	28 V	-	-	150 mA	8W	160 V
BLF242 BLF242 - VHF PUSH-PULL POWER VDM Ampleon USA Inc.	3,891	-	RFQ		Bulk	-	Obsolete	N-Channel	175MHz	16dB	28 V	10µA	-	10 mA	5W	65 V
MRF6V3090NR1 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	3,950	-	RFQ	Технические	Bulk	-	Active	LDMOS	860MHz	22dB	50 V	-	-	350 mA	18W	110 V
MRF6S21060NBR1 RF S BAND, N-CHANNEL POWER MOSFE Freescale Semiconductor	2,909	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
MRF8S9120NR3 SINGLE W-CDMA LATERAL N-CHANNEL Freescale Semiconductor	3,152	-	RFQ	Технические	Bulk	-	Active	LDMOS	960MHz	19.8dB	28 V	-	-	800 mA	33W	70 V
CLF1G0060S-10 CLF1G0060S-10 - 10W BROADBAND RF NXP Semiconductors	3,163	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
CLF1G0060-10 CLF1G0060-10 - 10W BROADBAND RF Ampleon USA Inc.	2,408	-	RFQ	Технические	Tray	-	Active	GaN HEMT	6GHz	16dB	50 V	-	-	50 mA	10W	150 V
TM-10 TM-10 - 10W BROADBAND RF POWER G Ampleon USA Inc.	2,163	-	RFQ	Технические	Tray	-	Obsolete	GaN HEMT	-	-	-	-	-	-	10W	-
MRF24301HSR5 MRF24301 - RF POWER LDMOS TRANSI NXP Semiconductors	100	-	RFQ		Bulk	-	Obsolete	LDMOS	2.4GHz ~ 2.5GHz	13.5dB	-	-	-	-	300W	32 V
WP2806025UH RF GaN HEMT 28V DC ~ 6GHZ, 25W WAVEPIA.,Co.Ltd	3,182	-	RFQ	Технические	Box	-	Active	GaN HEMT	5GHz	17.4dB	28 V	-	-	100 mA	25W	160 V
WP4806025UH RF GaN HEMT 48V DC ~ 6GHZ, 25W WAVEPIA.,Co.Ltd	2,240	-	RFQ	Технические	Box	-	Active	GaN HEMT	5GHz	18.9dB	48 V	-	-	100 mA	25W	160 V
MRF8P20165WHSR5 FET RF 2CH 65V 2.01GHZ NI780S4 NXP USA Inc.	2,451	-	RFQ	Технические	Bulk	*	Active	-	-	-	-	-	-	-	-	-
WP2806045UH RF GaN HEMT 28V DC ~ 6GHZ, 45W WAVEPIA.,Co.Ltd	2,147	-	RFQ	Технические	Box	-	Active	GaN HEMT	5GHz	6.56dB	28 V	-	-	410 mA	60W	160 V
MHT1004GNR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	3,843	-	RFQ	Технические	Bulk	-	Obsolete	LDMOS	2.45GHz	15.2dB	32 V	10µA	-	100 mA	280W	65 V