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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
CLF1G0060S-10U RF FET HEMT 150V 14.5DB SOT1227B Ampleon USA Inc.	2,827	-	RFQ	Технические	Tray	-	Not For New Designs	GaN HEMT	3GHz ~ 3.5GHz	14.5dB	50 V	-	-	50 mA	10W	150 V
MRF166W FET RF 2CH 65V 500MHZ 412-01 MACOM Technology Solutions	2,716	-	RFQ	Технические	Tray	-	Active	2 N-Channel (Dual) Common Source	30MHz ~ 500MHz	16dB	28 V	8A	-	100 mA	40W	65 V
BLC10G18XS-550AVTY BLC10G18XS-550AVT/SOT1258/REEL Ampleon USA Inc.	3,096	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual), Common Source	1.805GHz ~ 1.88GHz	16dB	28 V	2.8µA	-	800 mA	550W	65 V
BLC2425M8LS300PY RF FET LDMOS 65V 17DB SOT12501 Ampleon USA Inc.	3,335	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual), Common Source	2.45GHz	17.5dB	32 V	-	-	20 mA	300W	65 V
BLF7G27LS-150P,118 RF FET LDMOS 65V 16DB SOT539B Ampleon USA Inc.	3,388	-	RFQ	Технические	Tape & Reel (TR)	-	Last Time Buy	LDMOS (Dual), Common Source	2.5GHz ~ 2.7GHz	16.5dB	28 V	37A	-	1.2 A	30W	65 V
MRF275L FET RF 65V 500MHZ 333-04 MACOM Technology Solutions	2,933	-	RFQ	Технические	Tray	-	Active	N-Channel	500MHz	8.8dB	28 V	13A	-	100 mA	100W	65 V
BLF174XRS,112 RF FET LDMOS 110V 28DB SOT1214B Ampleon USA Inc.	2,503	-	RFQ	Технические	Tray	-	Active	LDMOS (Dual), Common Source	108MHz	28.5dB	50 V	-	-	100 mA	600W	110 V
BLF2425M9L30J RF FET LDMOS 65V 18.5DB SOT1135A Ampleon USA Inc.	3,716	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	2.45GHz	18.5dB	32 V	-	-	20 mA	30W	65 V
MRF151G FET RF 2CH 125V 175MHZ 375-04 MACOM Technology Solutions	3,069	-	RFQ	Технические	Tray	-	Active	2 N-Channel (Dual) Common Source	175MHz	16dB	50 V	40A	-	500 mA	300W	125 V
BLF2425M8L140J RF FET LDMOS 65V 19DB SOT502A Ampleon USA Inc.	2,196	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	2.45GHz	19dB	28 V	-	-	1.3 A	140W	65 V
BLF0910H9LS600J BLF0910H9LS600/SOT502/REEL Ampleon USA Inc.	2,796	-	RFQ	Технические	Tape & Reel (TR),Bulk	-	Active	LDMOS	900MHz ~ 930MHz	18.6dB	50 V	2.8µA	-	90 mA	600W	108 V
BLF2425M7L250P,118 RF FET LDMOS 65V 15DB SOT539A Ampleon USA Inc.	3,774	-	RFQ	Технические	Tape & Reel (TR)	-	Not For New Designs	LDMOS (Dual), Common Source	2.45GHz	15dB	28 V	-	-	20 mA	250W	65 V
BLF2425M7LS250P:11 RF FET LDMOS 65V 15DB SOT539B Ampleon USA Inc.	2,283	-	RFQ	Технические	Tape & Reel (TR)	-	Not For New Designs	LDMOS (Dual), Common Source	2.45GHz	15dB	28 V	-	-	20 mA	250W	65 V
STAC3932B TRANS RF PWR N-CH 580W STAC244B STMicroelectronics	2,094	-	RFQ	Технические	Tray	-	Active	N-Channel	123MHz	-	100 V	20A	-	250 mA	580W	250 V
STAC4932B TRANSISTOR RF MOSF N-CH STAC244B STMicroelectronics	3,621	-	RFQ	Технические	Tray	-	Active	N-Channel	123MHz	26dB	100 V	-	-	500 mA	1000W	200 V
ARF466FL RF PWR MOSFET 1000V 13A Microchip Technology	3,824	-	RFQ	Технические	Bulk	-	Active	N-Channel	40.68MHz	16dB	150 V	13A	-	-	150W	1000 V
VRF141MP MOSFET RF PWR N-CH 28V 150W M174 Microchip Technology	2,255	-	RFQ	Технические	Tube	*	Active	-	-	-	-	-	-	-	-	-
BLF2324M8LS200PJ RF FET LDMOS 65V 17.2DB SOT539B Ampleon USA Inc.	3,802	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual), Common Source	2.3GHz ~ 2.4GHz	17.2dB	28 V	-	-	1.74 A	60W	65 V
CLF1G0060S-30U RF FET HEMT 150V 13DB SOT1227B Ampleon USA Inc.	2,244	-	RFQ	Технические	Tray	-	Not For New Designs	GaN HEMT	3GHz ~ 3.5GHz	13dB	50 V	-	-	70 mA	30W	150 V
C4H18W500AZ C4H18W500AZ/SOT1273/TRAYD Ampleon USA Inc.	3,816	-	RFQ	Технические	Tray	-	Active	2 N-Channel (Dual) Common Source	1.8GHz ~ 2GHz	14.6dB	48 V	-	-	350 mA	500W	150 V