Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP153

IRFP153

N-CHANNEL POWER MOSFET

Harris Corporation
2,728 -

RFQ

IRFP153

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 34A (Tc) 10V 80mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP450R

IRFP450R

N-CHANNEL POWER MOSFET

Harris Corporation
2,028 -

RFQ

IRFP450R

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP350A

IRFP350A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,958 -

RFQ

IRFP350A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 17A (Tc) 10V 300mOhm @ 8.5A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 202W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS3004

AUIRFS3004

MOSFET N-CH 40V 195A D2PAK-3

Infineon Technologies
2,024 -

RFQ

AUIRFS3004

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS250B

IRFS250B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,707 -

RFQ

IRFS250B

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 21.3A (Tc) 10V 85mOhm @ 10.65A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS3006

AUIRFS3006

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,421 -

RFQ

AUIRFS3006

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3107

AUIRFS3107

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies
2,036 -

RFQ

AUIRFS3107

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3206

AUIRFS3206

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
2,914 -

RFQ

AUIRFS3206

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3207Z

AUIRFS3207Z

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,465 -

RFQ

AUIRFS3207Z

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3306

AUIRFS3306

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
3,582 -

RFQ

AUIRFS3306

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 125 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3307Z

AUIRFS3307Z

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,514 -

RFQ

AUIRFS3307Z

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3607

AUIRFS3607

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies
3,823 -

RFQ

AUIRFS3607

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3806

AUIRFS3806

MOSFET N-CH 60V 43A D2PAK

Infineon Technologies
676 -

RFQ

AUIRFS3806

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR330BTM

IRFR330BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,660 -

RFQ

IRFR330BTM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1Ohm @ 2.25A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS150A

IRFS150A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,177 -

RFQ

IRFS150A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 40mOhm @ 15.5A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 2270 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2112-T2-AZ

2SK2112-T2-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,907 -

RFQ

2SK2112-T2-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
IRFS30067PPBF

IRFS30067PPBF

N-CHANNEL POWER MOSFET

Infineon Technologies
2,005 -

RFQ

IRFS30067PPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2364-AZ

2SK2364-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,303 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFS510A

IRFS510A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,501 -

RFQ

IRFS510A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 400mOhm @ 2.25A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 240 pF @ 25 V - 21W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU214BTU

IRFU214BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,596 -

RFQ

IRFU214BTU

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.1A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 275 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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