Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SFR9220TM

SFR9220TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,721 -

RFQ

SFR9220TM

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 3.1A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 540 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK4198FS

2SK4198FS

MOSFET N-CH 600V 4A TO220-3

onsemi
56,300 -

RFQ

2SK4198FS

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.34Ohm @ 2.5A, 10V - 14.3 nC @ 10 V ±30V 360 pF @ 30 V - 2W (Ta), 30W (Tc) 150°C (TJ) Through Hole
NX7002AKA215

NX7002AKA215

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
3,609 -

RFQ

NX7002AKA215

Технические

Bulk * Active - - - - - - - - - - - - - -
IPA60R520C6

IPA60R520C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,879 -

RFQ

IPA60R520C6

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
SFR9034TM

SFR9034TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,568 -

RFQ

SFR9034TM

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 140mOhm @ 7A, 10V 4V @ 250µA 38 nC @ 10 V ±25V 1155 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
VN2406M

VN2406M

SMALL SIGNAL N-CHANNEL MOSFET

Siliconix
3,202 -

RFQ

VN2406M

Технические

Bulk * Active - - - - - - - - - - - - - -
IPA50R650CEZKSA2

IPA50R650CEZKSA2

N-CHANNEL POWER MOSFET

Infineon Technologies
3,305 -

RFQ

IPA50R650CEZKSA2

Технические

Bulk * Active - - - - - - - - - - - - - -
SFR9210TM

SFR9210TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,921 -

RFQ

SFR9210TM

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 1.6A (Tc) 10V 3Ohm @ 800mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 285 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFL1P08

RFL1P08

P-CHANNEL MOSFET

Harris Corporation
2,688 -

RFQ

RFL1P08

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 1A (Tc) 10V 3.65Ohm @ 1A, 10V 4V @ 250µA - ±20V 150 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S70N06SM

RF1S70N06SM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,679 -

RFQ

RF1S70N06SM

Технические

Bulk PSPICE® Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 14mOhm @ 70A, 10V 4V @ 250µA 215 nC @ 20 V ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMCXB900UEL147

PMCXB900UEL147

P-CHANNEL MOSFET

NXP USA Inc.
3,332 -

RFQ

PMCXB900UEL147

Технические

Bulk * Active - - - - - - - - - - - - - -
RF1S30P06SM

RF1S30P06SM

P-CHANNEL POWER MOSFET

Harris Corporation
2,624 -

RFQ

RF1S30P06SM

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 30A - - - - - - - - - Surface Mount
IPB260N06N3G

IPB260N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,123 -

RFQ

IPB260N06N3G

Технические

Bulk * Active - - - - - - - - - - - - - -
PMXB120EPE147

PMXB120EPE147

SMALL SIGNAL FET

NXP USA Inc.
3,741 -

RFQ

PMXB120EPE147

Технические

Bulk * Active - - - - - - - - - - - - - -
SFR9210TF

SFR9210TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,335 -

RFQ

SFR9210TF

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 1.6A (Tc) 10V 3Ohm @ 800mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 285 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMK30EP518

PMK30EP518

P-CHANNEL POWER MOSFET

NXP USA Inc.
3,455 -

RFQ

PMK30EP518

Технические

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 14.9A (Tc) 10V 19mOhm @ 9.2A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2240 pF @ 25 V - 6.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFR9230BTM

SFR9230BTM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,271 -

RFQ

SFR9230BTM

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 5.4A (Tc) 10V 800mOhm @ 2.7A, 10V 4V @ 250µA 45 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMT200EPEA115

PMT200EPEA115

P-CHANNEL MOSFET

NXP USA Inc.
3,989 -

RFQ

PMT200EPEA115

Технические

Bulk * Active - - - - - - - - - - - - - -
SI4466DY

SI4466DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
2,132 -

RFQ

SI4466DY

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 2.5V, 4.5V 7.5mOhm @ 15A, 4.5V 1.5V @ 250µA 66 nC @ 5 V ±12V 4700 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMV28UNEA215

PMV28UNEA215

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
2,691 -

RFQ

PMV28UNEA215

Технические

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь