| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSMN1R6-40YLC,115MOSFET N-CH 40V 100A LFPAK56 Nexperia USA Inc. |
3,495 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 1.55mOhm @ 25A, 10V | 1.95V @ 1mA | 126 nC @ 10 V | ±20V | 7790 pF @ 20 V | - | 288W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP1080UCB4-7MOSFET P-CH 12V 3.3A U-WLB1010-4 Diodes Incorporated |
3,561 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 3.3A (Ta) | 1.5V, 4.5V | 80mOhm @ 500mA, 4.5V | 1V @ 250µA | 5 nC @ 4.5 V | -6V | 350 pF @ 6 V | - | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SJ203-L-AP-CHANNEL SMALL SIGNAL MOSFET Renesas Electronics America Inc |
3,545 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
DMP21D5UFD-7MOSFET P-CH 20V 600MA 3DFN Diodes Incorporated |
3,321 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 600mA (Ta) | 1.2V, 4.5V | 1Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.8 nC @ 8 V | ±8V | 46.1 pF @ 10 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSS138BKW/DG/B2135SMALL SIGNAL N-CHANNEL MOSFET Nexperia USA Inc. |
3,914 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK7E1R9-40E,127MOSFET N-CH 40V 120A I2PAK Nexperia USA Inc. |
24,572 | - |
RFQ |
Технические |
Bulk,Tube | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.9mOhm @ 25A, 10V | 4V @ 1mA | 118 nC @ 10 V | ±20V | 9700 pF @ 25 V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
2SJ257-EP-CHANNEL POWER MOSFET onsemi |
2,937 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
BSS84AK-B215P-CHANNEL MOSFET NXP USA Inc. |
2,940 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RLD03N06CLEN-CHANNEL POWER MOSFET Harris Corporation |
3,890 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
2SJ244JYTR-EP-CHANNEL SMALL SIGNAL MOSFET Renesas Electronics America Inc |
2,630 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NX602NBKS115SMALL SIGNAL N-CHANNEL MOSFET NXP USA Inc. |
3,481 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
SPP80N03S2L05N-CHANNEL POWER MOSFET Infineon Technologies |
3,512 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
RF1S30P05SMP-CHANNEL POWER MOSFET Harris Corporation |
3,120 | - |
RFQ |
Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 30A | - | - | - | - | - | - | - | - | - | Surface Mount |
|
RFB18N10CSVMN-CHANNEL POWER MOSFET Harris Corporation |
3,062 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 100mOhm @ 9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | - | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
PMN48XPA115P-CHANNEL MOSFET NXP USA Inc. |
3,949 | - |
RFQ |
Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.1A (Ta) | - | 55mOhm @ 2.4A, 4.5V | 1.25V @ 250µA | 13 nC @ 4.5 V | ±12V | 1000 pF @ 10 V | - | 530mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSH111BK215SMALL SIGNAL N-CHANNEL MOSFET NXP USA Inc. |
2,560 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPI045N10N3 GN-CHANNEL POWER MOSFET Infineon Technologies |
2,953 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SQJ174EP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
3,086 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 293A (Tc) | 10V | 2.9mOhm @ 15A, 10V | 3.5V @ 250µA | 81 nC @ 10 V | ±20V | 6111 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
2SJ208-T1-AZP-CHANNEL POWER MOSFET Renesas Electronics America Inc |
2,570 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PSMN5R5-60YS,115MOSFET N-CH 60V 100A LFPAK56 Nexperia USA Inc. |
3,594 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 5.2mOhm @ 15A, 10V | 4V @ 1mA | 56 nC @ 10 V | ±20V | 3501 pF @ 30 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |