Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP40N10LE

RFP40N10LE

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,846 -

RFQ

RFP40N10LE

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 5V 40Ohm @ 40A, 5V 3V @ 250µA 180 nC @ 10 V ±10V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH7440TR2PBF

IRFH7440TR2PBF

MOSFET N-CH 40V 85A 8PQFN

Infineon Technologies
3,349 -

RFQ

IRFH7440TR2PBF

Технические

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) - 2.4mOhm @ 50A, 10V 3.9V @ 100µA 138 nC @ 10 V - 4574 pF @ 25 V - - - Surface Mount
PMZ550UNE315

PMZ550UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
3,377 -

RFQ

PMZ550UNE315

Технические

Bulk * Active - - - - - - - - - - - - - -
FK8V03020L

FK8V03020L

MOSFET N CH 33V 14A WMINI8

Panasonic Electronic Components
3,661 -

RFQ

FK8V03020L

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 33 V 14A (Ta) 4.5V, 10V 4.6mOhm @ 7A, 10V 3V @ 2.2mA 14 nC @ 4.5 V ±10V 1500 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SPB16N50C3

SPB16N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,345 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FK8V03060L

FK8V03060L

MOSFET N CH 33V 6.5A WMINI8

Panasonic Electronic Components
2,259 -

RFQ

FK8V03060L

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 33 V 6.5A (Ta) 4.5V, 10V 20mOhm @ 3.3A, 10V 2.5V @ 0.48mA 3.8 nC @ 4.5 V ±20V 360 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SPD15P10P G

SPD15P10P G

P-CHANNEL POWER MOSFET

Infineon Technologies
3,595 -

RFQ

SPD15P10P G

Технические

Bulk * Active - - - - - - - - - - - - - -
PSMN1R5-30BLE118

PSMN1R5-30BLE118

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,939 -

RFQ

PSMN1R5-30BLE118

Технические

Bulk * Active - - - - - - - - - - - - - -
PSMN035-150P

PSMN035-150P

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,911 -

RFQ

PSMN035-150P

Технические

Bulk * Active - - - - - - - - - - - - - -
PSMN165-200K518

PSMN165-200K518

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
2,738 -

RFQ

PSMN165-200K518

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 2.9A (Tc) 10V 165mOhm @ 2.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1330 pF @ 25 V - 3.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN2R4-30MLD115

PSMN2R4-30MLD115

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,958 -

RFQ

PSMN2R4-30MLD115

Технические

Bulk * Active - - - - - - - - - - - - - -
PSMN2R5-60PL127

PSMN2R5-60PL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,575 -

RFQ

PSMN2R5-60PL127

Технические

Bulk * Active - - - - - - - - - - - - - -
SPP08P06PXK

SPP08P06PXK

P-CHANNEL POWER MOSFET

Infineon Technologies
2,001 -

RFQ

SPP08P06PXK

Технические

Bulk * Active - - - - - - - - - - - - - -
SPU21N05L

SPU21N05L

N-CHANNEL POWER MOSFET

Infineon Technologies
3,281 -

RFQ

SPU21N05L

Технические

Bulk * Active - - - - - - - - - - - - - -
RJK5033DPD-00#J2

RJK5033DPD-00#J2

MOSFET N-CH 500V 6A MP3A

Renesas Electronics America Inc
2,400 -

RFQ

RJK5033DPD-00#J2

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.3Ohm @ 3A, 10V - - ±30V 600 pF @ 25 V - 65W (Tc) 150°C (TJ) Surface Mount
RQJ0201UGDQA#H1

RQJ0201UGDQA#H1

P-CHANNEL MOSFET

Renesas Electronics America Inc
2,158 -

RFQ

RQJ0201UGDQA#H1

Технические

Bulk * Active - - - - - - - - - - - - - -
SPU07N60S5IN

SPU07N60S5IN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,589 -

RFQ

SPU07N60S5IN

Технические

Bulk - Active - - - - - - - - - - - - - -
SPW12N50C3IN

SPW12N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,473 -

RFQ

SPW12N50C3IN

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
RQK0603CGDQSWS-E

RQK0603CGDQSWS-E

N CH MOS FET POWER SWITCHING

Renesas Electronics America Inc
2,595 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SJ205-AZ

2SJ205-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
2,559 -

RFQ

2SJ205-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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