Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2N7002W-7-F

2N7002W-7-F

MOSFET N-CH 60V 115MA SOT323

Diodes Incorporated
1,633,136 -

RFQ

2N7002W-7-F

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
RV2C010UNT2L

RV2C010UNT2L

MOSFET N-CH 20V 1A DFN1006-3

Rohm Semiconductor
99,637 -

RFQ

RV2C010UNT2L

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.2V, 4.5V 470mOhm @ 500mA, 4.5V 1V @ 1mA - ±8V 40 pF @ 10 V - 400mW (Ta) 150°C (TJ) Surface Mount
IXTT12N140

IXTT12N140

MOSFET N-CH 1400V 12A TO268

IXYS
3,496 -

RFQ

IXTT12N140

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1400 V 12A (Tc) 10V 2Ohm @ 6A, 10V 4.5V @ 250µA 106 nC @ 10 V ±20V 3720 pF @ 25 V - 890W (Tc) - Surface Mount
FDV303N

FDV303N

MOSFET N-CH 25V 680MA SOT23

onsemi
513,417 -

RFQ

FDV303N

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 680mA (Ta) 2.7V, 4.5V 450mOhm @ 500mA, 4.5V 1.5V @ 250µA 2.3 nC @ 4.5 V ±8V 50 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MKE11R600DCGFC

MKE11R600DCGFC

MOSFET N-CH 600V 15A I4PAC

IXYS
2,410 -

RFQ

MKE11R600DCGFC

Технические

Box CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
SIR644DP-T1-GE3

SIR644DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
3,561 -

RFQ

SIR644DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.2V @ 250µA 71 nC @ 10 V ±20V 3200 pF @ 20 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN25UN,115

PMN25UN,115

MOSFET N-CH 20V 6A 6TSOP

NXP USA Inc.
4,555 -

RFQ

PMN25UN,115

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.8V, 4.5V 27mOhm @ 6A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±8V 470 pF @ 10 V - 530mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6728MTR1PBF

IRF6728MTR1PBF

MOSFET N-CH 30V 23A DIRECTFET

Infineon Technologies
2,574 -

RFQ

IRF6728MTR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 140A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4110 pF @ 15 V - 2.1W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6810STR1PBF

IRF6810STR1PBF

MOSFET N CH 25V 16A S1

Infineon Technologies
2,186 -

RFQ

IRF6810STR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 16A (Ta), 50A (Tc) 4.5V, 10V 5.2mOhm @ 16A, 10V 2.1V @ 25µA 11 nC @ 4.5 V ±16V 1038 pF @ 13 V - 2.1W (Ta), 20W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6892STR1PBF

IRF6892STR1PBF

MOSFET N-CH 25V 28A DIRECTFET

Infineon Technologies
3,211 -

RFQ

IRF6892STR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 125A (Tc) 4.5V, 10V 1.7mOhm @ 28A, 10V 2.1V @ 50µA 25 nC @ 4.5 V ±16V 2510 pF @ 13 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6893MTR1PBF

IRF6893MTR1PBF

MOSFET N-CH 25V 29A DIRECTFET

Infineon Technologies
3,496 -

RFQ

IRF6893MTR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 168A (Tc) 4.5V, 10V 1.6mOhm @ 29A, 10V 2.1V @ 100µA 38 nC @ 4.5 V ±16V 3480 pF @ 13 V - 2.1W (Ta), 69W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7526D1TRPBF

IRF7526D1TRPBF

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies
3,847 -

RFQ

IRF7526D1TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8302MTR1PBF

IRF8302MTR1PBF

MOSFET N CH 30V 31A MX

Infineon Technologies
2,748 -

RFQ

IRF8302MTR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 53 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF8304MTR1PBF

IRF8304MTR1PBF

MOSFET N-CH 30V 28A DIRECTFET

Infineon Technologies
2,199 -

RFQ

IRF8304MTR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SIS439DNT-T1-GE3

SIS439DNT-T1-GE3

MOSFET P-CH 30V 50A PPAK1212-8S

Vishay Siliconix
2,750 -

RFQ

SIS439DNT-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 11mOhm @ 14A, 10V 2.8V @ 250µA 68 nC @ 10 V ±20V 2135 pF @ 15 V - 3.8W (Ta), 52.1W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI5415AEDU-T1-GE3

SI5415AEDU-T1-GE3

MOSFET P-CH 20V 25A PPAK

Vishay Siliconix
3,154 -

RFQ

SI5415AEDU-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 25A (Tc) 1.8V, 4.5V 9.6mOhm @ 10A, 4.5V 1V @ 250µA 120 nC @ 8 V ±8V 4300 pF @ 10 V - 3.1W (Ta), 31W (Tc) -50°C ~ 150°C (TJ) Surface Mount
TK16C60W,S1VQ

TK16C60W,S1VQ

MOSFET N-CH 600V 15.8A I2PAK

Toshiba Semiconductor and Storage
3,521 -

RFQ

TK16C60W,S1VQ

Технические

Tube DTMOSIV Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK20C60W,S1VQ

TK20C60W,S1VQ

MOSFET N-CH 600V 20A I2PAK

Toshiba Semiconductor and Storage
2,142 -

RFQ

TK20C60W,S1VQ

Технические

Tube DTMOSIV Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
IRF8308MTR1PBF

IRF8308MTR1PBF

MOSFET N-CH 30V 27A DIRECTFET

Infineon Technologies
2,148 -

RFQ

IRF8308MTR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4404 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH8316TRPBF

IRFH8316TRPBF

MOSFET N-CH 30V 27A/50A 8PQFN

Infineon Technologies
4,000 -

RFQ

IRFH8316TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 50A (Tc) 4.5V, 10V 2.95mOhm @ 20A, 10V 2.2V @ 50µA 59 nC @ 10 V ±20V 3610 pF @ 10 V - 3.6W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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