| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HRF3205MOSFET N-CH 55V 100A TO220-3 Harris Corporation |
3,650 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
SIHA22N60E-GE3N-CHANNEL 600V Vishay Siliconix |
2,044 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | EL | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SUM70030M-GE3MOSFET N-CH 100V 150A TO263-7 Vishay Siliconix |
3,271 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | - | 3.5mOhm @ 30A, 10V | 4V @ 250µA | 214 nC @ 10 V | ±20V | 10870 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFS75347PPBFHEXFET POWER MOSFET Infineon Technologies |
2,223 | - |
RFQ |
Технические |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.95mOhm @ 100A, 10V | 3.7V @ 250µA | 300 nC @ 10 V | ±20V | 9990 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRF448MOSFET N-CH 500V 7.9A TO204AE International Rectifier |
3,302 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.9A | - | - | - | - | - | - | - | - | - | Through Hole |
|
IRF245MOSFET N-CH 250V 13A TO204AE International Rectifier |
3,841 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 13A (Tc) | - | - | - | - | - | - | - | 125W | - | Through Hole |
|
|
STH145N8F7-2AGMOSFET N-CH 80V 90A H2PAK-2 STMicroelectronics |
3,299 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, STripFET™ F7 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 90A (Tc) | 10V | 4mOhm @ 45A, 10V | 4.5V @ 250µA | 96 nC @ 10 V | ±20V | 6340 pF @ 40 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFB3207ZGPBFMOSFET N-CH 75V 120A TO220AB International Rectifier |
2,970 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | - | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDBL86363-F085MOSFET N-CH 80V 240A 8HPSOF onsemi |
2,955 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 250µA | 169 nC @ 10 V | ±20V | 10000 pF @ 40 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
|
HUF75542P3_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,864 | - |
RFQ |
Технические |
Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 20 V | ±20V | 2750 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDMS2D5N08CMOSFET N-CH 80V 166A POWER56 onsemi |
2,454 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 166A (Tc) | 6V, 10V | 2.7mOhm @ 68A, 10V | 4V @ 380µA | 84 nC @ 10 V | ±20V | 6240 pF @ 40 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
STP18N60M2MOSFET N-CH 600V 13A TO220 STMicroelectronics |
2,381 | - |
RFQ |
Технические |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5 nC @ 10 V | ±25V | 791 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPB021N06N3GN-CHANNEL POWER MOSFET Infineon Technologies |
2,677 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PSMN4R2-80YSEXPSMN4R2-80YSE/SOT1023/4 LEADS Nexperia USA Inc. |
2,024 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 170A (Ta) | 10V | 4.2mOhm @ 25A, 10V | 3.6V @ 1mA | 110 nC @ 10 V | ±20V | 8000 pF @ 40 V | - | 294W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
2SK4196LSN-CHANNEL SILICON MOSFET Sanyo |
2,091 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.5A (Ta) | 10V | 1.56Ohm @ 2.8A, 10V | 5V @ 1mA | 14.6 nC @ 10 V | ±30V | 360 pF @ 30 V | - | 2W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole |
|
NVMFS6H818NLT1GMOSFET N-CH 80V 22A/135A 5DFN onsemi |
2,383 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta), 135A (Tc) | 4.5V, 10V | 3.2mOhm @ 20A, 10V | 2V @ 190µA | 64 nC @ 10 V | ±20V | 3844 pF @ 40 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
NVMJS1D7N04CTWGMOSFET N-CH 40V 35A/185A 8LFPAK onsemi |
3,641 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 130µA | 47 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIHA22N60EL-GE3N-CHANNEL600V Vishay Siliconix |
3,057 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 1690 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
R8007AND3FRATLMOSFET N-CH 800V 7A TO252 Rohm Semiconductor |
2,360 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 1.6Ohm @ 3.5A, 10V | 5V @ 1mA | 28 nC @ 10 V | ±30V | 850 pF @ 25 V | - | 140W (Tc) | 150°C (TJ) | Surface Mount |
|
2SK3058-AZN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
2,631 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |