Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS3006-7P-IR

AUIRFS3006-7P-IR

PFET, 240A I(D), 60V, 0.0021OHM

International Rectifier
100 -

RFQ

AUIRFS3006-7P-IR

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C404NLWFT1G

NVMFS5C404NLWFT1G

MOSFET N-CH 40V 49A/352A 5DFN

onsemi
2,633 -

RFQ

NVMFS5C404NLWFT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 49A (Ta), 352A (Tc) 4.5V, 10V 0.75mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3162-91-E

2SK3162-91-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,883 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PJMH190N60E1_T0_00601

PJMH190N60E1_T0_00601

600V/ 190MOHM / 20.6A/ EASY TO D

Panjit International Inc.
3,515 -

RFQ

Tube * Active - - - - - - - - - - - - - -
NVMTS1D6N10MCTXG

NVMTS1D6N10MCTXG

PTNG 100V SINGLE NCH PQFN8X8 STD

onsemi
3,927 -

RFQ

NVMTS1D6N10MCTXG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Ta), 273A (Tc) 10V 1.7mOhm @ 90A, 10V 4V @ 650µA 106 nC @ 10 V ±20V 7630 pF @ 50 V - 5W (Ta), 291W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP86363-F085

FDP86363-F085

MOSFET N-CH 80V 110A TO220-3

onsemi
3,092 -

RFQ

FDP86363-F085

Технические

Tube Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 10000 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPTC014N08NM5ATMA1

IPTC014N08NM5ATMA1

MOSFET N-CH 80V 37A/330A HDSOP

Infineon Technologies
3,677 -

RFQ

IPTC014N08NM5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Ta), 330A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 180 nC @ 10 V ±20V 13000 pF @ 40 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB0250N807L

FDB0250N807L

MOSFET N-CH 80V 240A TO263-7

onsemi
3,111 -

RFQ

FDB0250N807L

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 8V, 10V 2.2mOhm @ 30A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 15400 pF @ 40 V - 3.8W (Ta), 214W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP130N60

FCP130N60

MOSFET N-CH 600V 28A TO220-3

onsemi
2,523 -

RFQ

FCP130N60

Технические

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 130mOhm @ 14A, 10V 3.5V @ 250µA 70 nC @ 10 V ±20V 3590 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK110E65Z,S1X

TK110E65Z,S1X

650V DTMOS VI TO-220 110MOHM

Toshiba Semiconductor and Storage
3,282 -

RFQ

TK110E65Z,S1X

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
SIHF080N60E-GE3

SIHF080N60E-GE3

E SERIES POWER MOSFET TO-220 FUL

Vishay Siliconix
2,840 -

RFQ

SIHF080N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDBL86063

FDBL86063

MOSFET N-CH 100V 240A 8HPSOF

onsemi
2,353 -

RFQ

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 240A (Tc) 10V 2.6mOhm @ 80A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 5120 pF @ 50 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IRL6283MTRPBF

IRL6283MTRPBF

MOSFET N-CH 20V 38A DIRECTFET

Infineon Technologies
3,650 -

RFQ

IRL6283MTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V 1.1V @ 100µA 158 nC @ 4.5 V ±12V 8292 pF @ 10 V - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
PSMN1R6-60CLJ

PSMN1R6-60CLJ

MOSFET N-CH 60V DPAK

Nexperia USA Inc.
3,951 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
PSMN2R1-60CSJ

PSMN2R1-60CSJ

MOSFET N-CH 60V DPAK

Nexperia USA Inc.
2,804 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
2N7002WST1G

2N7002WST1G

MOSFET N-CH 60V 0.115A SC70

onsemi
2,169 -

RFQ

Tape & Reel (TR) - Obsolete - - - 310mA (Ta) 4.5V, 10V - - - ±20V - - - -55°C ~ 150°C (TJ) Surface Mount
2SJ652-1E

2SJ652-1E

MOSFET P-CH 60V 28A TO220F-3SG

onsemi
2,433 -

RFQ

2SJ652-1E

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 28A (Ta) 4V, 10V 38mOhm @ 14A, 10V - 80 nC @ 10 V ±20V 4360 pF @ 20 V - 2W (Ta), 30W (Tc) 150°C (TJ) Through Hole
2SJ661-1E

2SJ661-1E

MOSFET P-CH 60V 38A TO262-3

onsemi
3,659 -

RFQ

2SJ661-1E

Технические

Bulk,Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 38A (Ta) 4V, 10V 39mOhm @ 19A, 10V - 80 nC @ 10 V ±20V 4360 pF @ 20 V - 1.65W (Ta), 65W (Tc) 150°C (TJ) Through Hole
2SK3703-1E

2SK3703-1E

MOSFET N-CH 60V 30A TO220F-3SG

onsemi
2,996 -

RFQ

2SK3703-1E

Технические

Bulk,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 4V, 10V 26mOhm @ 15A, 10V - 40 nC @ 10 V ±20V 1780 pF @ 20 V - 2W (Ta), 25W (Tc) 150°C (TJ) Through Hole
2SK3707-1E

2SK3707-1E

MOSFET N-CH 100V 20A TO220F-3SG

onsemi
721 -

RFQ

2SK3707-1E

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4V, 10V 60mOhm @ 10A, 10V - 44 nC @ 10 V ±20V 2150 pF @ 20 V - 2W (Ta), 25W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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